| PartNumber | RN2711(TE85L,F) | RN2711JE(TE85L,F) | RN2710JE(TE85L,F) |
| Description | Bipolar Transistors - Pre-Biased BRT PNP 2-in-1 Ic -100mA -50V VCEO | Bipolar Transistors - Pre-Biased ESV PLN (LF) TRANSISTOR Pd=200mW F=1MHz | Bipolar Transistors - Pre-Biased ESV PLN (LF) TRANSISTOR Pd=200mW F=1MHz |
| Manufacturer | Toshiba | Toshiba | Toshiba |
| Product Category | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased |
| RoHS | Y | - | - |
| Configuration | Dual | Dual | Dual |
| Transistor Polarity | PNP | PNP | PNP |
| Typical Input Resistor | 10 kOhms | 10 kOhms | 4.7 kOhms |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SOT-353-5 | ESV-6 | ESV-5 |
| DC Collector/Base Gain hfe Min | 120 | 120 | 120 |
| Collector Emitter Voltage VCEO Max | - 50 V | - 50 V | - 50 V |
| Continuous Collector Current | - 100 mA | - 100 mA | - 100 mA |
| Pd Power Dissipation | 200 mW | 100 mW | 100 mW |
| Series | RN2711 | - | - |
| Packaging | Reel | Reel | Reel |
| Emitter Base Voltage VEBO | - 5 V | - 5 V | - 5 V |
| Brand | Toshiba | Toshiba | Toshiba |
| Maximum DC Collector Current | - 100 mA | - 100 mA | - 100 mA |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased |
| Factory Pack Quantity | 3000 | 4000 | 4000 |
| Subcategory | Transistors | Transistors | Transistors |
| Unit Weight | 0.000212 oz | - | - |
| Maximum Operating Frequency | - | 200 MHz | 200 MHz |
| Peak DC Collector Current | - | - 100 mA | - 100 mA |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Maximum Operating Temperature | - | + 150 C | + 150 C |
| Channel Mode | - | Enhancement | Enhancement |