PartNumber | RN2961(TE85L,F) | RN2961(TE85LF)CT-ND | RN2961(TE85LF)DKR-ND |
Description | Bipolar Transistors - Pre-Biased US6 PLN (LF) TRANSISTOR Pd 200mW F 1MHz | ||
Manufacturer | Toshiba | - | - |
Product Category | Bipolar Transistors - Pre-Biased | - | - |
Configuration | Dual | - | - |
Transistor Polarity | PNP | - | - |
Typical Input Resistor | 4.7 kOhms | - | - |
Typical Resistor Ratio | 1 | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | US-6 | - | - |
DC Collector/Base Gain hfe Min | 30 | - | - |
Maximum Operating Frequency | 200 MHz | - | - |
Collector Emitter Voltage VCEO Max | - 50 V | - | - |
Continuous Collector Current | - 100 mA | - | - |
Peak DC Collector Current | - 100 mA | - | - |
Pd Power Dissipation | 200 mW | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Packaging | Reel | - | - |
Emitter Base Voltage VEBO | - 10 V | - | - |
Brand | Toshiba | - | - |
Channel Mode | Enhancement | - | - |
Maximum DC Collector Current | - 100 mA | - | - |
Product Type | BJTs - Bipolar Transistors - Pre-Biased | - | - |
Factory Pack Quantity | 3000 | - | - |
Subcategory | Transistors | - | - |