RN2967

RN2967(TE85L,F) vs RN2967 vs RN2967(TE85LF)CT-ND

 
PartNumberRN2967(TE85L,F)RN2967RN2967(TE85LF)CT-ND
DescriptionBipolar Transistors - Pre-Biased US6 PLN (LF) TRANSISTOR Pd 200mW F 1MHz
ManufacturerToshibaToshiba Semiconductor and Storage-
Product CategoryBipolar Transistors - Pre-BiasedTransistors (BJT) - Arrays, Pre-Biased-
ConfigurationDual--
Transistor PolarityPNP--
Typical Input Resistor10 kOhms--
Typical Resistor Ratio0.213--
Mounting StyleSMD/SMT--
Package / CaseES-6--
DC Collector/Base Gain hfe Min80--
Maximum Operating Frequency200 MHz--
Collector Emitter Voltage VCEO Max- 50 V--
Continuous Collector Current- 100 mA--
Peak DC Collector Current- 100 mA--
Pd Power Dissipation100 mW--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
PackagingReelDigi-ReelR Alternate Packaging-
Emitter Base Voltage VEBO- 6 V--
BrandToshiba--
Channel ModeEnhancement--
Maximum DC Collector Current- 100 mA--
Product TypeBJTs - Bipolar Transistors - Pre-Biased--
Factory Pack Quantity3000--
SubcategoryTransistors--
Series---
Package Case-SC-101, SOT-883-
Mounting Type-Surface Mount-
Supplier Device Package-US6-
Power Max-200mW-
Transistor Type-2 PNP - Pre-Biased (Dual)-
Current Collector Ic Max-100mA-
Voltage Collector Emitter Breakdown Max-50V-
Resistor Base R1 Ohms-10k-
Resistor Emitter Base R2 Ohms-47k-
DC Current Gain hFE Min Ic Vce-80 @ 10mA, 5V-
Vce Saturation Max Ib Ic-300mV @ 250μA, 5mA-
Current Collector Cutoff Max-100nA (ICBO)-
Frequency Transition-200MHz-
Manufacturer Part # Description RFQ
Toshiba
Toshiba
RN2967(TE85L,F) Bipolar Transistors - Pre-Biased US6 PLN (LF) TRANSISTOR Pd 200mW F 1MHz
RN2967FS(TPL3) Bipolar Transistors - Pre-Biased -50mA -20volts 6Pin 10K x 47Kohms
RN2967 New and Original
RN2967FE New and Original
RN2967(TE85LF)CT-ND New and Original
RN2967(TE85LF)DKR-ND New and Original
RN2967(TE85LF)TR-ND New and Original
RN2967FE(TE85LF)CT-ND New and Original
RN2967FE(TE85LF)DKR-ND New and Original
RN2967FE(TE85LF)TR-ND New and Original
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