RN297

RN2970FE vs RN2970FE(TE85LF)CT-ND vs RN2970FE(TE85LF)DKR-ND

 
PartNumberRN2970FERN2970FE(TE85LF)CT-NDRN2970FE(TE85LF)DKR-ND
Description
ManufacturerToshiba Semiconductor and Storage--
Product CategoryTransistors (BJT) - Arrays, Pre-Biased--
Series---
PackagingDigi-ReelR--
Package CaseSOT-563, SOT-666--
Mounting TypeSurface Mount--
Supplier Device PackageES6--
Power Max100mW--
Transistor Type2 PNP - Pre-Biased (Dual)--
Current Collector Ic Max100mA--
Voltage Collector Emitter Breakdown Max50V--
Resistor Base R1 Ohms4.7k--
Resistor Emitter Base R2 Ohms10k--
DC Current Gain hFE Min Ic Vce120 @ 1mA, 5V--
Vce Saturation Max Ib Ic300mV @ 250μA, 5mA--
Current Collector Cutoff Max100nA (ICBO)--
Frequency Transition200MHz--
Manufacturer Part # Description RFQ
Toshiba
Toshiba
RN2971(TE85L,F) Bipolar Transistors - Pre-Biased US6 PLN (LF) TRANSISTOR Pd 200mW F 1MHz
RN2972FS(TPL3) Bipolar Transistors - Pre-Biased -50mA -20volts 6Pin 22Kohms
RN2973FS(TPL3) Bipolar Transistors - Pre-Biased -50mA -20volts 6Pin 47Kohms
RN2970FS(TPL3) Bipolar Transistors - Pre-Biased -50mA -20volts 6Pin 4.7Kohms
RN2971FS(TPL3) Bipolar Transistors - Pre-Biased -50mA -20volts 6Pin 10Kohms
RN2970FE New and Original
RN2971 New and Original
RN2971FE New and Original
RN2971FETE85LF New and Original
RN2970FE(TE85LF)CT-ND New and Original
RN2970FE(TE85LF)DKR-ND New and Original
RN2970FE(TE85LF)TR-ND New and Original
RN2971(TE85LF)CT-ND New and Original
RN2971(TE85LF)DKR-ND New and Original
RN2971(TE85LF)TR-ND New and Original
RN2971FE(TE85LF)CT-ND New and Original
RN2971FE(TE85LF)DKR-ND New and Original
RN2971FE(TE85LF)TR-ND New and Original
RN2971FE(TE85LF) New and Original
RN2975 New and Original
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