 | | |
| PartNumber | RQ3E120GNTB | RQ3E120BNTB |
| Description | MOSFET 4.5V Drive Nch MOSFET | MOSFET 4.5V Drive Nch MOSFET |
| Manufacturer | ROHM Semiconductor | ROHM Semiconductor |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | HSMT-8 | HSMT-8 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V |
| Id Continuous Drain Current | 12 A | 12 A |
| Rds On Drain Source Resistance | 8.8 mOhms | 6.6 mOhms |
| Vgs th Gate Source Threshold Voltage | 2.5 V | 2.5 V |
| Vgs Gate Source Voltage | 20 V | 20 V |
| Qg Gate Charge | 10 nC | 29 nC |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 150 C | - |
| Pd Power Dissipation | 2 W | 2 W |
| Configuration | Single | Single |
| Packaging | Reel | Reel |
| Transistor Type | 1 N-Channel | 1 N-channel |
| Brand | ROHM Semiconductor | ROHM Semiconductor |
| Forward Transconductance Min | 10 S | - |
| Fall Time | 3.4 ns | 12 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 4.5 ns | 30 ns |
| Factory Pack Quantity | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 25.5 ns | 46 ns |
| Typical Turn On Delay Time | 9.6 ns | 9 ns |
| Part # Aliases | RQ3E120GN | RQ3E120BN |
| Unit Weight | - | 0.196723 oz |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
| RQ3E120GNTB | MOSFET 4.5V Drive Nch MOSFET | ||
| RQ3E120BNTB | MOSFET 4.5V Drive Nch MOSFET | ||
| RQ3E120BNTB | MOSFET N-CH 30V 12A HSMT8 | ||
| RQ3E120GNTB | MOSFET N-CH 30V 12A 8-HSMT | ||
ROHM Semiconductor |
RQ3E120ATTB | MOSFET PCH -30V -12A MIDDLE POWER | |
| RQ3E120ATTB | MOSFET P-CH 30V 12A HSMT8 | ||
| RQ3E120ASFU7TB | New and Original | ||
| RQ3E120AT | New and Original | ||
| RQ3E120AT-TB | New and Original | ||
| RQ3E120BNFU7TB | New and Original | ||
| RQ3E120GNA10TB | New and Original | ||
| RQ3E120GNFU7TB | New and Original |