RU1C002ZPT

RU1C002ZPTCL

 
PartNumberRU1C002ZPTCL
DescriptionMOSFET 4V Drive Pch MOSFET Drive Pch
ManufacturerROHM Semiconductor
Product CategoryMOSFET
RoHSY
TechnologySi
Mounting StyleSMD/SMT
Package / CaseSOT-323FL-3
Number of Channels1 Channel
Transistor PolarityP-Channel
Vds Drain Source Breakdown Voltage20 V
Id Continuous Drain Current200 mA
Rds On Drain Source Resistance1.2 Ohms
Vgs th Gate Source Threshold Voltage300 mV
Vgs Gate Source Voltage4.5 V
Qg Gate Charge1.4 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd Power Dissipation150 mW
ConfigurationSingle
Channel ModeEnhancement
PackagingReel
Height0.9 mm
Length2 mm
ProductMOSFET
SeriesRU1C002ZP
Transistor Type1 P-Channel MOSFET
TypePower MOSFET
Width1.25 mm
BrandROHM Semiconductor
Fall Time17 ns
Product TypeMOSFET
Rise Time4 ns
Factory Pack Quantity3000
SubcategoryMOSFETs
Typical Turn Off Delay Time17 ns
Typical Turn On Delay Time6 ns
Part # AliasesRU1C002ZP
Unit Weight0.004395 oz
Manufacturer Part # Description RFQ
RU1C002ZPTCL MOSFET 4V Drive Pch MOSFET Drive Pch
RU1C002ZPTCL MOSFET P-CH 20V 0.2A UMT3F
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