 |  | | |
| PartNumber | SBC807-25LT1G | SBC807-25LT1 | SBC807-25LT1G-CUT TAPE |
| Description | Bipolar Transistors - BJT SS GP XSTR SPCL TR | Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB | |
| Manufacturer | ON Semiconductor | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-23-3 | - | - |
| Transistor Polarity | PNP | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | - 45 V | - | - |
| Collector Base Voltage VCBO | - 50 V | - | - |
| Emitter Base Voltage VEBO | - 5 V | - | - |
| Collector Emitter Saturation Voltage | - 0.7 V | - | - |
| Maximum DC Collector Current | 0.5 A | - | - |
| Gain Bandwidth Product fT | 100 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | BC807-25L | - | - |
| DC Current Gain hFE Max | 400 | - | - |
| Height | 0.94 mm | - | - |
| Length | 2.9 mm | - | - |
| Packaging | Reel | - | - |
| Width | 1.3 mm | - | - |
| Brand | ON Semiconductor | - | - |
| Continuous Collector Current | - 0.5 A | - | - |
| DC Collector/Base Gain hfe Min | 160 | - | - |
| Pd Power Dissipation | 300 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Qualification | AEC-Q101 | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.000282 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
| SBC807-25LT1G | Bipolar Transistors - BJT SS GP XSTR SPCL TR | ||
| SBC807-25LT3G | Bipolar Transistors - BJT SS GP XSTR SPCL TR | ||
| SBC807-25LT1 | Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB | ||
| SBC807-25LT1G-CUT TAPE | New and Original | ||
ON Semiconductor |
SBC807-25LT3G | Bipolar Transistors - BJT SS GP XSTR SPCL TR | |
| SBC807-25LT1G | Bipolar Transistors - BJT SS GP XSTR SPCL TR |