 |  | | |
| PartNumber | SBC846BDW1T1G | SBC846BDW1T1 | SBC846BDW1T1/1BF |
| Description | Bipolar Transistors - BJT SS DUAL NP XSTR GP | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-363-6 | - | - |
| Transistor Polarity | NPN | - | - |
| Configuration | Dual | - | - |
| Collector Emitter Voltage VCEO Max | 65 V | - | - |
| Collector Base Voltage VCBO | 80 V | - | - |
| Emitter Base Voltage VEBO | 6 V | - | - |
| Collector Emitter Saturation Voltage | 0.6 V | - | - |
| Maximum DC Collector Current | 0.1 A | - | - |
| Gain Bandwidth Product fT | 100 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | BC846B | - | - |
| DC Current Gain hFE Max | 450 | - | - |
| Packaging | Reel | - | - |
| Brand | ON Semiconductor | - | - |
| Continuous Collector Current | 0.1 A | - | - |
| DC Collector/Base Gain hfe Min | 200 | - | - |
| Pd Power Dissipation | 380 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Qualification | AEC-Q101 | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.000265 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
| SBC846BDW1T1G | Bipolar Transistors - BJT SS DUAL NP XSTR GP | ||
| SBC846BDW1T1 | New and Original | ||
| SBC846BDW1T1/1BF | New and Original | ||
| SBC846BDW1T1G-CUT TAPE | New and Original | ||
ON Semiconductor |
SBC846BDW1T1G | Bipolar Transistors - BJT SS DUAL NP XSTR GP |