PartNumber | SBC847BDW1T1G | SBC847AWT1G | SBC847B |
Description | Bipolar Transistors - BJT SS GP XSTR NPN 45V | Bipolar Transistors - BJT SS GP XSTR NPN 45V | |
Manufacturer | ON Semiconductor | ON Semiconductor | - |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
RoHS | Y | Y | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | SOT-363-6 | SOT-323-3 | - |
Transistor Polarity | NPN | NPN | - |
Configuration | Dual | Single | - |
Collector Emitter Voltage VCEO Max | 45 V | 45 V | - |
Collector Base Voltage VCBO | 50 V | 50 V | - |
Emitter Base Voltage VEBO | 6 V | 6 V | - |
Collector Emitter Saturation Voltage | 0.6 V | 250 mV | - |
Maximum DC Collector Current | 100 mA | 100 mA | - |
Gain Bandwidth Product fT | 100 MHz | 100 MHz | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Series | BC847BDW1 | BC847AW | - |
DC Current Gain hFE Max | 450 at 2 mA, 5 V | - | - |
Packaging | Reel | Reel | - |
Brand | ON Semiconductor | ON Semiconductor | - |
DC Collector/Base Gain hfe Min | 200 at 2 mA, 5 V | - | - |
Pd Power Dissipation | 380 mW | 200 mW | - |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
Qualification | AEC-Q101 | AEC-Q101 | - |
Factory Pack Quantity | 3000 | 3000 | - |
Subcategory | Transistors | Transistors | - |
Unit Weight | 0.000265 oz | 0.000176 oz | - |