PartNumber | SBC856BDW1T3G | SBC856BDW1T1G | SBC856BLT1G |
Description | Bipolar Transistors - BJT SS GP XSTR PNP 65V | Bipolar Transistors - BJT SS SC-88 GP XSTR PNP 65V | Bipolar Transistors - Pre-Biased SS GP XSTR SPCL TR |
Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - Pre-Biased |
RoHS | Y | Y | Y |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | SOT-363-6 | SC-70-6 | SOT-23-3 |
Transistor Polarity | PNP | PNP | PNP |
Configuration | Dual | Dual | Single |
Collector Emitter Voltage VCEO Max | - 65 V | - 65 V | 65 V |
Collector Base Voltage VCBO | - 80 V | - 80 V | 80 V |
Emitter Base Voltage VEBO | - 5 V | - 5 V | - |
Maximum DC Collector Current | - 200 mA | - | - |
Gain Bandwidth Product fT | 100 MHz | 100 MHz | - |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Series | BC856B | BC856B | BC856BL |
DC Current Gain hFE Max | 475 at - 2 mA, - 5 V | 475 | - |
Packaging | Reel | Reel | Reel |
Brand | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Continuous Collector Current | - 100 mA | - 0.1 A | 0.1 A |
DC Collector/Base Gain hfe Min | 220 at - 2 mA, - 5 V | 220 | 220 |
Pd Power Dissipation | 380 mW | 380 mW | 300 mW |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors - Pre-Biased |
Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
Factory Pack Quantity | 10000 | 3000 | 3000 |
Subcategory | Transistors | Transistors | Transistors |
Unit Weight | 0.000265 oz | 0.000988 oz | 0.000282 oz |
Collector Emitter Saturation Voltage | - | - 0.65 V | - |
Maximum Operating Frequency | - | - | 100 MHz |
Height | - | - | 0.94 mm |
Length | - | - | 2.9 mm |
Width | - | - | 1.3 mm |