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| PartNumber | SBC857BDW1T1G | SBC857ALT1G | SBC857-B |
| Description | Bipolar Transistors - BJT SS GP XSTR PNP 45 | Bipolar Transistors - Pre-Biased SS GP XSTR SPCL TR | |
| Manufacturer | ON Semiconductor | ON Semiconductor | - |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - Pre-Biased | - |
| RoHS | Y | Y | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-363-6 | SOT-23-3 | - |
| Transistor Polarity | PNP | PNP | - |
| Configuration | Dual | Single | - |
| Collector Emitter Voltage VCEO Max | - 45 V | 45 V | - |
| Collector Base Voltage VCBO | - 50 V | 50 V | - |
| Emitter Base Voltage VEBO | - 5 V | - | - |
| Collector Emitter Saturation Voltage | - 0.65 V | - | - |
| Maximum DC Collector Current | - 100 mA | - | - |
| Gain Bandwidth Product fT | 100 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Series | BC857BDW1 | BC857AL | - |
| DC Current Gain hFE Max | 475 at - 2 mA, - 5 V | - | - |
| Packaging | Reel | Reel | - |
| Brand | ON Semiconductor | ON Semiconductor | - |
| DC Collector/Base Gain hfe Min | 220 at - 2 mA, - 5 V | 125 | - |
| Pd Power Dissipation | 380 mW | 300 mW | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors - Pre-Biased | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | Transistors | Transistors | - |
| Unit Weight | 0.000265 oz | 0.000282 oz | - |
| Maximum Operating Frequency | - | 100 MHz | - |
| Continuous Collector Current | - | 0.1 A | - |
| Height | - | 0.94 mm | - |
| Length | - | 2.9 mm | - |
| Width | - | 1.3 mm | - |