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| PartNumber | SCT2080KEC | SCT2080KE | SCT2080KE 40A 1200V |
| Description | MOSFET N-Ch MOSFET 1200V Silicon Carbide SiC | ||
| Manufacturer | ROHM Semiconductor | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | SiC | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-247-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 1200 V | - | - |
| Id Continuous Drain Current | 40 A | - | - |
| Rds On Drain Source Resistance | 80 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.6 V | - | - |
| Vgs Gate Source Voltage | - 6 V, 22 V | - | - |
| Qg Gate Charge | 106 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 262 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | - | - |
| Series | SCT2x | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | ROHM Semiconductor | - | - |
| Forward Transconductance Min | 3.7 S | - | - |
| Fall Time | 22 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 36 ns | - | - |
| Factory Pack Quantity | 360 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 76 ns | - | - |
| Typical Turn On Delay Time | 35 ns | - | - |
| Part # Aliases | SCT2080KE | - | - |
| Unit Weight | 1.340411 oz | - | - |