PartNumber | SCT2160KEC | SCT2160KE | SCT2160KECU |
Description | MOSFET 1200V20A160mOhm Silicon Carbide SiC | ||
Manufacturer | ROHM Semiconductor | Rohm Semiconductor | - |
Product Category | MOSFET | FETs - Single | - |
RoHS | Y | - | - |
Technology | SiC | SiC | - |
Mounting Style | Through Hole | Through Hole | - |
Package / Case | TO-247-3 | - | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 1200 V | - | - |
Id Continuous Drain Current | 22 A | - | - |
Rds On Drain Source Resistance | 160 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 1.6 V | - | - |
Vgs Gate Source Voltage | - 6 V, 22 V | - | - |
Qg Gate Charge | 62 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 175 C | - | - |
Pd Power Dissipation | 165 W | - | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | - | - |
Packaging | Tube | Tube | - |
Series | SCT2x | SCT2160KE | - |
Transistor Type | 1 N-Channel Power MOSFET | 1 N-Channel | - |
Brand | ROHM Semiconductor | - | - |
Forward Transconductance Min | 2.4 S | - | - |
Fall Time | 27 ns | 27 ns | - |
Product Type | MOSFET | - | - |
Rise Time | 25 ns | 25 ns | - |
Factory Pack Quantity | 360 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 67 ns | 67 ns | - |
Typical Turn On Delay Time | 23 ns | 23 ns | - |
Part # Aliases | SCT2160KE | - | - |
Unit Weight | 1.340411 oz | 1.340411 oz | - |
Package Case | - | TO-247-3 | - |
Operating Temperature | - | 175°C (TJ) | - |
Mounting Type | - | Through Hole | - |
Supplier Device Package | - | TO-247 | - |
FET Type | - | MOSFET N-Channel, Metal Oxide | - |
Power Max | - | 165W | - |
Drain to Source Voltage Vdss | - | 1200V (1.2kV) | - |
Input Capacitance Ciss Vds | - | 1200pF @ 800V | - |
FET Feature | - | Silicon Carbide (SiC) | - |
Current Continuous Drain Id 25°C | - | 22A (Tc) | - |
Rds On Max Id Vgs | - | 208 mOhm @ 7A, 18V | - |
Vgs th Max Id | - | 4V @ 2.5mA | - |
Gate Charge Qg Vgs | - | 62nC @ 18V | - |
Pd Power Dissipation | - | 165 W | - |
Id Continuous Drain Current | - | 22 A | - |
Vds Drain Source Breakdown Voltage | - | 1200 V | - |
Vgs th Gate Source Threshold Voltage | - | 4 V | - |
Rds On Drain Source Resistance | - | 160 mOhms | - |
Qg Gate Charge | - | 62 nC | - |
Forward Transconductance Min | - | 2.4 S | - |