PartNumber | SCT2280KEC | SCT2280ASSG | SCT2280KE |
Description | MOSFET MOSFET1200V14A280m OhmSiliconCarbideSiC | ||
Manufacturer | ROHM Semiconductor | - | ROHM Semiconductor |
Product Category | MOSFET | - | Transistors - FETs, MOSFETs - Single |
RoHS | Y | - | - |
Technology | SiC | - | SiC |
Mounting Style | Through Hole | - | Through Hole |
Package / Case | TO-247-3 | - | - |
Number of Channels | 1 Channel | - | 1 Channel |
Transistor Polarity | N-Channel | - | N-Channel |
Vds Drain Source Breakdown Voltage | 1200 V | - | - |
Id Continuous Drain Current | 14 A | - | - |
Rds On Drain Source Resistance | 280 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 1.6 V | - | - |
Vgs Gate Source Voltage | - 6 V, 22 V | - | - |
Qg Gate Charge | 36 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - 55 C |
Maximum Operating Temperature | + 175 C | - | + 175 C |
Pd Power Dissipation | 108 W | - | - |
Configuration | Single | - | Single |
Channel Mode | Enhancement | - | - |
Packaging | Tube | - | Tube |
Series | SCT2x | - | SCT2280KE |
Transistor Type | 1 N-Channel | - | 1 N-Channel |
Brand | ROHM Semiconductor | - | - |
Forward Transconductance Min | 1.4 S | - | - |
Fall Time | 29 ns | - | 29 ns |
Product Type | MOSFET | - | - |
Rise Time | 19 ns | - | 19 ns |
Factory Pack Quantity | 360 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 47 ns | - | 47 ns |
Typical Turn On Delay Time | 19 ns | - | 19 ns |
Part # Aliases | SCT2280KE | - | - |
Unit Weight | 1.340411 oz | - | 1.340411 oz |
Package Case | - | - | TO-247-3 |
Pd Power Dissipation | - | - | 108 W |
Vgs Gate Source Voltage | - | - | - 6 V to + 22 V |
Id Continuous Drain Current | - | - | 14 A |
Vds Drain Source Breakdown Voltage | - | - | 1200 V |
Vgs th Gate Source Threshold Voltage | - | - | 1.6 V to 4 V |
Rds On Drain Source Resistance | - | - | 280 mOhms |
Qg Gate Charge | - | - | 36 nC |
Forward Transconductance Min | - | - | 1.4 S |