PartNumber | SCT30N120 | SCT30N120D2 | SCT30N120H |
Description | MOSFET 1200V silicon carbide MOSFET | MOSFET | MOSFET |
Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | - | - |
Technology | SiC | SiC | SiC |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | HiP-247-3 | HiP247-3 | HiP-247-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 1.2 kV | 1200 V | 1200 V |
Id Continuous Drain Current | 45 A | 45 A | 45 A |
Rds On Drain Source Resistance | 80 mOhms | 100 mOhms | 100 mOhms |
Vgs th Gate Source Threshold Voltage | 2.6 V | 1.8 V | 1.8 V |
Vgs Gate Source Voltage | 25 V, - 10 V | - 10 V to 25 V | - 10 V to 25 V |
Qg Gate Charge | 105 nC | - | 105 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 200 C | + 200 C | + 200 C |
Pd Power Dissipation | 270 W | 270 W | 270 W |
Configuration | Single | Single | Single |
Tradename | HiP247â?¢ | - | - |
Packaging | Tube | - | - |
Series | SCT30N120 | SCT30N120D2 | SCT30N120H |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Fall Time | 28 ns | 28 ns | 28 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 20 ns | 20 ns | 20 ns |
Factory Pack Quantity | 600 | 980 | 1000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 45 ns | 45 ns | 45 ns |
Typical Turn On Delay Time | 19 ns | 19 ns | 19 ns |
Unit Weight | 1.340411 oz | - | - |
Channel Mode | - | Enhancement | Enhancement |