PartNumber | SCT10N120 | SCT10N120H |
Description | MOSFET Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package | MOSFET |
Manufacturer | STMicroelectronics | STMicroelectronics |
Product Category | MOSFET | MOSFET |
RoHS | Y | - |
Technology | SiC | SiC |
Mounting Style | Through Hole | Through Hole |
Package / Case | HiP-247-3 | HiP247-3 |
Number of Channels | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 1.2 kV | 1200 V |
Id Continuous Drain Current | 12 A | 12 A |
Rds On Drain Source Resistance | 500 mOhms | 690 mOhms |
Vgs th Gate Source Threshold Voltage | 1.8 V | 1.8 V |
Vgs Gate Source Voltage | 25 V | - 10 V to 25 V |
Qg Gate Charge | 22 nC | 22 nC |
Minimum Operating Temperature | - 55 C | - 55 C |
Maximum Operating Temperature | + 200 C | + 200 C |
Pd Power Dissipation | 150 W | 150 W |
Configuration | Single | Single |
Channel Mode | Enhancement | Enhancement |
Tradename | HiP247â?¢ | - |
Packaging | Tube | - |
Series | SCT10N120 | SCT10N120H |
Transistor Type | 1 N-Channel | 1 N-Channel |
Brand | STMicroelectronics | STMicroelectronics |
Fall Time | 17 ns | 17 ns |
Product Type | MOSFET | MOSFET |
Rise Time | 12 ns | 12 ns |
Factory Pack Quantity | 600 | 1000 |
Subcategory | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 14 ns | 14 ns |
Typical Turn On Delay Time | 7 ns | 7 ns |