SGP23N60UFD

SGP23N60UFDTU vs SGP23N60UFD vs SGP23N60UFD G23N60UFD

 
PartNumberSGP23N60UFDTUSGP23N60UFDSGP23N60UFD G23N60UFD
DescriptionIGBT Transistors Dis High Perf IGBT
ManufacturerON Semiconductor--
Product CategoryIGBT Transistors--
RoHSY--
TechnologySi--
Package / CaseTO-220-3--
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage2.1 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C23 A--
Pd Power Dissipation100 W--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesSGP23N60UFD--
PackagingTube--
Continuous Collector Current Ic Max23 A--
Height9.4 mm--
Length10.1 mm--
Width4.7 mm--
BrandON Semiconductor / Fairchild--
Continuous Collector Current23 A--
Gate Emitter Leakage Current+/- 100 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity1000--
SubcategoryIGBTs--
Part # AliasesSGP23N60UFDTU_NL--
Unit Weight0.063493 oz--
Manufacturer Part # Description RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
SGP23N60UFDTU IGBT Transistors Dis High Perf IGBT
SGP23N60UFD New and Original
SGP23N60UFD G23N60UFD New and Original
SGP23N60UFDTU_NL New and Original
ON Semiconductor
ON Semiconductor
SGP23N60UFDTU IGBT Transistors Dis High Perf IGBT
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