SGS10N60RUFD

SGS10N60RUFDTU vs SGS10N60RUFD vs SGS10N60RUFDTU(SG)

 
PartNumberSGS10N60RUFDTUSGS10N60RUFDSGS10N60RUFDTU(SG)
DescriptionIGBT Transistors 600V/10A/w/FRD
ManufacturerON SemiconductorFAIRCHILD-
Product CategoryIGBT TransistorsIGBTs - Single-
RoHSE--
TechnologySi--
Package / CaseTO-220-3 FP--
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage2.2 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C16 A--
Pd Power Dissipation55 W--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesSGS10N60RUFD--
PackagingTube--
Continuous Collector Current Ic Max16 A--
Height9.19 mm--
Length10.16 mm--
Width4.7 mm--
BrandON Semiconductor / Fairchild--
Continuous Collector Current16 A--
Gate Emitter Leakage Current+/- 100 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity1000--
SubcategoryIGBTs--
Part # AliasesSGS10N60RUFDTU_NL--
Unit Weight0.080072 oz--
Manufacturer Part # Description RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
SGS10N60RUFDTU IGBT Transistors 600V/10A/w/FRD
SGS10N60RUFD New and Original
SGS10N60RUFDTU(SG) New and Original
ON Semiconductor
ON Semiconductor
SGS10N60RUFDTU IGBT Transistors 600V/10A/w/FRD
Top