PartNumber | SI1012X-T1-GE3 | SI1012X-T1-E3 | SI1012X-T1 |
Description | MOSFET 20V 0.6A 175mW 700mohm @ 4.5V | MOSFET RECOMMENDED ALT 781-SI1012X-T1-GE3 | MOSFET RECOMMENDED ALT 781-SI1012X-T1-GE3 |
Manufacturer | Vishay | Vishay | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | SC-89-3 | SC-89-3 | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Id Continuous Drain Current | 600 mA | - | - |
Rds On Drain Source Resistance | 700 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 450 mV | - | - |
Vgs Gate Source Voltage | 4.5 V | - | - |
Qg Gate Charge | 750 pC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 275 mW | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Tradename | TrenchFET | TrenchFET | - |
Packaging | Reel | Reel | - |
Height | 0.8 mm | 0.8 mm | - |
Length | 1.6 mm | 1.6 mm | - |
Series | SI1 | SI1 | - |
Transistor Type | 1 N Channel | - | - |
Width | 0.85 mm | 0.85 mm | - |
Brand | Vishay / Siliconix | Vishay / Siliconix | - |
Forward Transconductance Min | 1 S | - | - |
Fall Time | 11 ns | - | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 5 ns | - | - |
Factory Pack Quantity | 3000 | 3000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 25 ns | - | - |
Typical Turn On Delay Time | 5 ns | - | - |
Part # Aliases | SI1012X-GE3 | SI1012X-E3 | - |
Unit Weight | 0.001058 oz | 0.001058 oz | - |