SI1012X-T

SI1012X-T1-GE3 vs SI1012X-T1-E3 vs SI1012X-T1

 
PartNumberSI1012X-T1-GE3SI1012X-T1-E3SI1012X-T1
DescriptionMOSFET 20V 0.6A 175mW 700mohm @ 4.5VMOSFET RECOMMENDED ALT 781-SI1012X-T1-GE3MOSFET RECOMMENDED ALT 781-SI1012X-T1-GE3
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSC-89-3SC-89-3-
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Id Continuous Drain Current600 mA--
Rds On Drain Source Resistance700 mOhms--
Vgs th Gate Source Threshold Voltage450 mV--
Vgs Gate Source Voltage4.5 V--
Qg Gate Charge750 pC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation275 mW--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameTrenchFETTrenchFET-
PackagingReelReel-
Height0.8 mm0.8 mm-
Length1.6 mm1.6 mm-
SeriesSI1SI1-
Transistor Type1 N Channel--
Width0.85 mm0.85 mm-
BrandVishay / SiliconixVishay / Siliconix-
Forward Transconductance Min1 S--
Fall Time11 ns--
Product TypeMOSFETMOSFET-
Rise Time5 ns--
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time25 ns--
Typical Turn On Delay Time5 ns--
Part # AliasesSI1012X-GE3SI1012X-E3-
Unit Weight0.001058 oz0.001058 oz-
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SI1012X-T1-GE3 MOSFET 20V 0.6A 175mW 700mohm @ 4.5V
SI1012X-T1-E3 MOSFET RECOMMENDED ALT 781-SI1012X-T1-GE3
SI1012X-T1 MOSFET RECOMMENDED ALT 781-SI1012X-T1-GE3
SI1012X-TI-GE3 New and Original
Vishay
Vishay
SI1012X-T1-E3 MOSFET N-CH 20V 500MA SC89-3
SI1012X-T1-GE3 MOSFET N-CH 20V 500MA SC89-3
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