SI1022R

SI1022R-T1-E3 vs SI1022R-T1 vs SI1022R-T1-GE3

 
PartNumberSI1022R-T1-E3SI1022R-T1SI1022R-T1-GE3
DescriptionMOSFET RECOMMENDED ALT 781-SI1022R-T1-GE3MOSFET RECOMMENDED ALT 781-SI1022R-T1-GE3MOSFET N-CH 60V 330MA SC-75A
ManufacturerVishay-Vishay Siliconix
Product CategoryMOSFET-FETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseSC-75-3--
TradenameTrenchFET-TrenchFET
PackagingReel-Digi-ReelR Alternate Packaging
Height0.8 mm--
Length1.575 mm--
SeriesSI1-TrenchFETR
Width0.76 mm--
BrandVishay / Siliconix--
Product TypeMOSFET--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Part # AliasesSI1022R-E3--
Part Aliases--SI1022R-GE3
Package Case--SC-75A
Operating Temperature---55°C ~ 150°C (TJ)
Mounting Type--Surface Mount
Number of Channels--1 Channel
Supplier Device Package--SC-75A
Configuration--Single
FET Type--MOSFET N-Channel, Metal Oxide
Power Max--250mW
Transistor Type--1 N-Channel
Drain to Source Voltage Vdss--60V
Input Capacitance Ciss Vds--30pF @ 25V
FET Feature--Standard
Current Continuous Drain Id 25°C--330mA (Ta)
Rds On Max Id Vgs--1.25 Ohm @ 500mA, 10V
Vgs th Max Id--2.5V @ 250μA
Gate Charge Qg Vgs--0.6nC @ 4.5V
Pd Power Dissipation--250 mW
Maximum Operating Temperature--+ 150 C
Minimum Operating Temperature--- 55 C
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--330 mA
Vds Drain Source Breakdown Voltage--60 V
Rds On Drain Source Resistance--1.25 Ohms
Transistor Polarity--N-Channel
Channel Mode--Enhancement
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SI1022R-T1-E3 MOSFET RECOMMENDED ALT 781-SI1022R-T1-GE3
SI1022R-T1 MOSFET RECOMMENDED ALT 781-SI1022R-T1-GE3
SI1022R-T1-GE3-CUT TAPE New and Original
Vishay
Vishay
SI1022R-T1-E3 MOSFET N-CH 60V 330MA SC-75A
SI1022R-T1-GE3 MOSFET N-CH 60V 330MA SC-75A
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