PartNumber | SI1022R-T1-E3 | SI1022R-T1 | SI1022R-T1-GE3 |
Description | MOSFET RECOMMENDED ALT 781-SI1022R-T1-GE3 | MOSFET RECOMMENDED ALT 781-SI1022R-T1-GE3 | MOSFET N-CH 60V 330MA SC-75A |
Manufacturer | Vishay | - | Vishay Siliconix |
Product Category | MOSFET | - | FETs - Single |
RoHS | Y | - | - |
Technology | Si | - | Si |
Mounting Style | SMD/SMT | - | SMD/SMT |
Package / Case | SC-75-3 | - | - |
Tradename | TrenchFET | - | TrenchFET |
Packaging | Reel | - | Digi-ReelR Alternate Packaging |
Height | 0.8 mm | - | - |
Length | 1.575 mm | - | - |
Series | SI1 | - | TrenchFETR |
Width | 0.76 mm | - | - |
Brand | Vishay / Siliconix | - | - |
Product Type | MOSFET | - | - |
Factory Pack Quantity | 3000 | - | - |
Subcategory | MOSFETs | - | - |
Part # Aliases | SI1022R-E3 | - | - |
Part Aliases | - | - | SI1022R-GE3 |
Package Case | - | - | SC-75A |
Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
Mounting Type | - | - | Surface Mount |
Number of Channels | - | - | 1 Channel |
Supplier Device Package | - | - | SC-75A |
Configuration | - | - | Single |
FET Type | - | - | MOSFET N-Channel, Metal Oxide |
Power Max | - | - | 250mW |
Transistor Type | - | - | 1 N-Channel |
Drain to Source Voltage Vdss | - | - | 60V |
Input Capacitance Ciss Vds | - | - | 30pF @ 25V |
FET Feature | - | - | Standard |
Current Continuous Drain Id 25°C | - | - | 330mA (Ta) |
Rds On Max Id Vgs | - | - | 1.25 Ohm @ 500mA, 10V |
Vgs th Max Id | - | - | 2.5V @ 250μA |
Gate Charge Qg Vgs | - | - | 0.6nC @ 4.5V |
Pd Power Dissipation | - | - | 250 mW |
Maximum Operating Temperature | - | - | + 150 C |
Minimum Operating Temperature | - | - | - 55 C |
Vgs Gate Source Voltage | - | - | 20 V |
Id Continuous Drain Current | - | - | 330 mA |
Vds Drain Source Breakdown Voltage | - | - | 60 V |
Rds On Drain Source Resistance | - | - | 1.25 Ohms |
Transistor Polarity | - | - | N-Channel |
Channel Mode | - | - | Enhancement |