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| PartNumber | SI1926DL-T1-GE3 | SI1926DL-T1-E3 |
| Description | MOSFET 60V Vds 20V Vgs SC70-6 | MOSFET 60V Vds 20V Vgs SC70-6 |
| Manufacturer | Vishay | Vishay |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | SOT-363-6 | SOT-363-6 |
| Number of Channels | 2 Channel | 2 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V |
| Id Continuous Drain Current | 370 mA | 370 mA |
| Rds On Drain Source Resistance | 1.4 Ohms | 1.4 Ohms |
| Vgs th Gate Source Threshold Voltage | 1 V | 1 V |
| Vgs Gate Source Voltage | 20 V | 10 V |
| Qg Gate Charge | 1.4 nC | 0.9 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 510 mW | 510 mW |
| Configuration | Dual | Dual |
| Channel Mode | Enhancement | Enhancement |
| Tradename | TrenchFET | TrenchFET |
| Packaging | Reel | Reel |
| Height | 1 mm | 1 mm |
| Length | 2.1 mm | 2.1 mm |
| Series | SI1 | SI1 |
| Transistor Type | 2 N-Channel | 2 N-Channel |
| Width | 1.25 mm | 1.25 mm |
| Brand | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 159 ms | 159 mS |
| Fall Time | 14 ns | 14 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 12 ns | 12 ns |
| Factory Pack Quantity | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 13 ns | 13 ns |
| Typical Turn On Delay Time | 6.5 ns | 6.5 ns |
| Unit Weight | 0.000265 oz | 0.000265 oz |
| Part # Aliases | - | SI1926DL-E3 |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI1926DL-T1-GE3 | MOSFET 60V Vds 20V Vgs SC70-6 | |
| SI1926DL-T1-E3 | MOSFET 60V Vds 20V Vgs SC70-6 | ||
Vishay |
SI1926DL-T1-E3 | MOSFET 2N-CH 60V 0.37A SC-70-6 | |
| SI1926DL-T1-GE3 | MOSFET 2N-CH 60V 0.37A SOT363 | ||
| SI1926DY | New and Original |