SI1967

SI1967DH-T1-GE3 vs SI1967DH-T1-E3 vs SI1967DH

 
PartNumberSI1967DH-T1-GE3SI1967DH-T1-E3SI1967DH
DescriptionMOSFET -20V Vds 8V Vgs SC70-6MOSFET -20V Vds 8V Vgs SC70-6
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-363-6SOT-363-6-
TradenameTrenchFETTrenchFET-
PackagingReelReel-
Height1 mm1 mm-
Length2.1 mm2.1 mm-
SeriesSI1SI1-
Width1.25 mm1.25 mm-
BrandVishay / SiliconixVishay / Siliconix-
Product TypeMOSFETMOSFET-
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Part # AliasesSI1903DL-T1-GE3SI1967DH-E3-
Unit Weight0.000265 oz0.000265 oz-
Number of Channels-2 Channel-
Transistor Polarity-P-Channel-
Vds Drain Source Breakdown Voltage-20 V-
Id Continuous Drain Current-1.3 A-
Rds On Drain Source Resistance-490 mOhms-
Vgs th Gate Source Threshold Voltage-400 mV-
Vgs Gate Source Voltage-8 V-
Qg Gate Charge-4 nC-
Minimum Operating Temperature-- 55 C-
Maximum Operating Temperature-+ 150 C-
Pd Power Dissipation-1.25 W-
Configuration-Dual-
Channel Mode-Enhancement-
Transistor Type-2 P-Channel-
Forward Transconductance Min-2 S-
Fall Time-10 ns-
Rise Time-27 ns-
Typical Turn Off Delay Time-15 ns-
Typical Turn On Delay Time-12 ns-
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SI1967DH-T1-GE3 MOSFET -20V Vds 8V Vgs SC70-6
SI1967DH-T1-E3 MOSFET -20V Vds 8V Vgs SC70-6
SI1967DH New and Original
SI1967DH-T1-GE3-CUT TAPE New and Original
Vishay
Vishay
SI1967DH-T1-E3 MOSFET 2P-CH 20V 1.3A SC70-6
SI1967DH-T1-GE3 MOSFET 2P-CH 20V 1.3A SC70-6
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