PartNumber | SI1967DH-T1-GE3 | SI1967DH-T1-E3 | SI1967DH |
Description | MOSFET -20V Vds 8V Vgs SC70-6 | MOSFET -20V Vds 8V Vgs SC70-6 | |
Manufacturer | Vishay | Vishay | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | SOT-363-6 | SOT-363-6 | - |
Tradename | TrenchFET | TrenchFET | - |
Packaging | Reel | Reel | - |
Height | 1 mm | 1 mm | - |
Length | 2.1 mm | 2.1 mm | - |
Series | SI1 | SI1 | - |
Width | 1.25 mm | 1.25 mm | - |
Brand | Vishay / Siliconix | Vishay / Siliconix | - |
Product Type | MOSFET | MOSFET | - |
Factory Pack Quantity | 3000 | 3000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Part # Aliases | SI1903DL-T1-GE3 | SI1967DH-E3 | - |
Unit Weight | 0.000265 oz | 0.000265 oz | - |
Number of Channels | - | 2 Channel | - |
Transistor Polarity | - | P-Channel | - |
Vds Drain Source Breakdown Voltage | - | 20 V | - |
Id Continuous Drain Current | - | 1.3 A | - |
Rds On Drain Source Resistance | - | 490 mOhms | - |
Vgs th Gate Source Threshold Voltage | - | 400 mV | - |
Vgs Gate Source Voltage | - | 8 V | - |
Qg Gate Charge | - | 4 nC | - |
Minimum Operating Temperature | - | - 55 C | - |
Maximum Operating Temperature | - | + 150 C | - |
Pd Power Dissipation | - | 1.25 W | - |
Configuration | - | Dual | - |
Channel Mode | - | Enhancement | - |
Transistor Type | - | 2 P-Channel | - |
Forward Transconductance Min | - | 2 S | - |
Fall Time | - | 10 ns | - |
Rise Time | - | 27 ns | - |
Typical Turn Off Delay Time | - | 15 ns | - |
Typical Turn On Delay Time | - | 12 ns | - |