SI2301C

SI2301CDS-T1-E3 vs SI2301CDS vs SI2301CDS-T1

 
PartNumberSI2301CDS-T1-E3SI2301CDSSI2301CDS-T1
DescriptionMOSFET -20V Vds 8V Vgs SOT-23
ManufacturerVishay-VISHAY
Product CategoryMOSFET-FETs - Single
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-23-3--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current3.1 A--
Rds On Drain Source Resistance112 mOhms--
Vgs th Gate Source Threshold Voltage400 mV--
Vgs Gate Source Voltage4.5 V--
Qg Gate Charge10 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.6 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameTrenchFET--
PackagingReel--
SeriesSI2--
Transistor Type1 P-Channel--
BrandVishay / Siliconix--
Forward Transconductance Min9.5 S--
Fall Time10 ns--
Product TypeMOSFET--
Rise Time35 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time30 ns--
Typical Turn On Delay Time11 ns--
Part # AliasesSI2301CDS-E3--
Unit Weight0.000282 oz--
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SI2301CDS-T1-GE3 MOSFET -20V Vds 8V Vgs SOT-23
SI2301CDS-T1-E3 MOSFET -20V Vds 8V Vgs SOT-23
SI2301CDS-T1-GE3. MOSFET 20V 3.1A 1.6W 112 mohms @ 4.5V
SI2301CDS New and Original
SI2301CDS-T1 New and Original
SI2301CDS-T1-G New and Original
SI2301CDS-T1-G3 New and Original
SI2301CDS-T1-GE3 (VISHAY New and Original
SI2301CDS-T1-GE3 (VISHAY) New and Original
SI2301CDS-T1-GE3 , MAX63 New and Original
SI2301CDS-TI-GE3 New and Original
SI2301CDS-T1-E3-CUT TAPE New and Original
SI2301CDS-T1-GE3-CUT TAPE New and Original
Vishay
Vishay
SI2301CDS-T1-GE3 MOSFET P-CH 20V 3.1A SOT23-3
SI2301CDS-T1-E3 MOSFET P-CH 20V 3.1A SOT23-3
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