SI2309C

SI2309CDS-T1-E3 vs SI2309CDS vs SI2309CDS SOT23-3

 
PartNumberSI2309CDS-T1-E3SI2309CDSSI2309CDS SOT23-3
DescriptionMOSFET -60V Vds 20V Vgs SOT-23
ManufacturerVishay--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-23-3--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current1.6 A--
Rds On Drain Source Resistance345 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage1 V--
Qg Gate Charge4.1 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.7 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameTrenchFET--
PackagingReel--
Height1.45 mm--
Length2.9 mm--
SeriesSI2--
Transistor Type1 P-Channel--
Width1.6 mm--
BrandVishay / Siliconix--
Forward Transconductance Min2.8 S--
Fall Time10 ns--
Product TypeMOSFET--
Rise Time10 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time15 ns--
Typical Turn On Delay Time5 ns--
Part # AliasesSI2309CDS-E3--
Unit Weight0.000282 oz--
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SI2309CDS-T1-GE3 MOSFET -60V Vds 20V Vgs SOT-23
SI2309CDS-T1-E3 MOSFET -60V Vds 20V Vgs SOT-23
SI2309CDS New and Original
SI2309CDS SOT23-3 New and Original
SI2309CDS-TI-GE3 New and Original
SI2309CDS-T1-E3-CUT TAPE New and Original
SI2309CDS-T1-GE3-CUT TAPE New and Original
Vishay
Vishay
SI2309CDS-T1-E3 MOSFET P-CH 60V 1.6A SOT23-3
SI2309CDS-T1-GE3 MOSFET P-CH 60V 1.6A SOT23-3
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