SI2309CDS-T

SI2309CDS-T1-GE3 vs SI2309CDS-T1-E3

 
PartNumberSI2309CDS-T1-GE3SI2309CDS-T1-E3
DescriptionMOSFET -60V Vds 20V Vgs SOT-23MOSFET -60V Vds 20V Vgs SOT-23
ManufacturerVishayVishay
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleSMD/SMTSMD/SMT
Package / CaseSOT-23-3SOT-23-3
Number of Channels1 Channel1 Channel
Transistor PolarityP-ChannelP-Channel
Vds Drain Source Breakdown Voltage60 V60 V
Id Continuous Drain Current1.6 A1.6 A
Rds On Drain Source Resistance345 mOhms345 mOhms
Vgs th Gate Source Threshold Voltage1 V1 V
Vgs Gate Source Voltage10 V1 V
Qg Gate Charge4.1 nC4.1 nC
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C
Pd Power Dissipation1.7 W1.7 W
ConfigurationSingleSingle
Channel ModeEnhancementEnhancement
TradenameTrenchFETTrenchFET
PackagingReelReel
Height1.45 mm1.45 mm
Length2.9 mm2.9 mm
SeriesSI2SI2
Transistor Type1 P-Channel1 P-Channel
Width1.6 mm1.6 mm
BrandVishay / SiliconixVishay / Siliconix
Forward Transconductance Min2.8 S2.8 S
Fall Time10 ns10 ns
Product TypeMOSFETMOSFET
Rise Time10 ns10 ns
Factory Pack Quantity30003000
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time15 ns15 ns
Typical Turn On Delay Time5 ns5 ns
Part # AliasesSI2309CDS-GE3SI2309CDS-E3
Unit Weight0.000282 oz0.000282 oz
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SI2309CDS-T1-GE3 MOSFET -60V Vds 20V Vgs SOT-23
SI2309CDS-T1-E3 MOSFET -60V Vds 20V Vgs SOT-23
Vishay
Vishay
SI2309CDS-T1-E3 MOSFET P-CH 60V 1.6A SOT23-3
SI2309CDS-T1-GE3 MOSFET P-CH 60V 1.6A SOT23-3
SI2309CDS-TI-GE3 New and Original
SI2309CDS-T1-E3-CUT TAPE New and Original
SI2309CDS-T1-GE3-CUT TAPE New and Original
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