PartNumber | SI2319DDS-T1-GE3 | SI2319DS-T1-E3 | SI2319CDS-T1-GE3 |
Description | MOSFET -40V Vds 20V Vgs SOT-23 | MOSFET 40V 3.0A 1.25W 82 mohms @ 10V | MOSFET -40V Vds 20V Vgs SOT-23 |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | SOT-23-3 | SOT-23-3 | SOT-23-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | P-Channel | P-Channel | P-Channel |
Vds Drain Source Breakdown Voltage | 40 V | 40 V | 40 V |
Id Continuous Drain Current | 3.6 A | 3.0 A | 4.4 A |
Rds On Drain Source Resistance | 75 mOhms | 82 mOhms | 77 mOhms |
Vgs th Gate Source Threshold Voltage | 1 V | 1 V | 1.2 V |
Vgs Gate Source Voltage | 10 V | 10 V | 10 V |
Qg Gate Charge | 12.5 nC | 17 nC | 21 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 1.7 W | 1.25 W | 2.5 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Reel | Reel | Reel |
Transistor Type | 1 P-Channel | 1 P-Channel | 1 P-Channel |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Forward Transconductance Min | 10 S | 7 S | 10 S |
Fall Time | 12 ns | 25 ns | 8 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 20 ns | 15 ns | 9 ns |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 20 ns | 25 ns | 20 ns |
Typical Turn On Delay Time | 10 ns | 7 ns | 8 ns |
Tradename | - | TrenchFET | TrenchFET |
Height | - | 1.45 mm | 1.45 mm |
Length | - | 2.9 mm | 2.9 mm |
Series | - | SI2 | SI2 |
Width | - | 1.6 mm | 1.6 mm |
Part # Aliases | - | SI2319DS-E3 | SI2319CDS-GE3 |
Unit Weight | - | 0.000282 oz | 0.000282 oz |