SI2343DS-T

SI2343DS-T1-E3 vs SI2343DS-T1-GE3 vs SI2343DS-T1

 
PartNumberSI2343DS-T1-E3SI2343DS-T1-GE3SI2343DS-T1
DescriptionMOSFET 30V 4.0A 1.25W 53 mohms @ 10VMOSFET 30V 4.0A 1.25W 53mohm @ 10VMOSFET RECOMMENDED ALT 781-SI2343CDS-T1-GE3
ManufacturerVishayVishayVishay
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMT--
Package / CaseSOT-23-3--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current3.1 A--
Rds On Drain Source Resistance53 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge14 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation0.75 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameTrenchFETTrenchFETTrenchFET
PackagingReelReelReel
SeriesSI2SI2SI2
Transistor Type1 P-Channel--
BrandVishay / SiliconixVishay / SiliconixVishay / Siliconix
Forward Transconductance Min10 S--
Fall Time20 ns--
Product TypeMOSFETMOSFETMOSFET
Rise Time15 ns--
Factory Pack Quantity300030003000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time31 ns--
Typical Turn On Delay Time10 ns--
Part # AliasesSI2343DS-E3SI2343DS-GE3-
Unit Weight0.000282 oz0.000282 oz0.000282 oz
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SI2343DS-T1-E3 MOSFET 30V 4.0A 1.25W 53 mohms @ 10V
SI2343DS-T1-GE3 MOSFET 30V 4.0A 1.25W 53mohm @ 10V
SI2343DS-T1 MOSFET RECOMMENDED ALT 781-SI2343CDS-T1-GE3
Vishay
Vishay
SI2343DS-T1 MOSFET P-CH 30V 3.1A SOT23
SI2343DS-T1-E3 MOSFET P-CH 30V 3.1A SOT23-3
SI2343DS-T1-GE3 MOSFET P-CH 30V 3.1A SOT-23
SI2343DS-T1-E3 (VISHAY) New and Original
SI2343DS-T1-E3-CUT TAPE New and Original
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