SI239

SI2392ADS-T1-GE3 vs SI2399DS-T1-GE3 vs SI2392DS-T1-GE3

 
PartNumberSI2392ADS-T1-GE3SI2399DS-T1-GE3SI2392DS-T1-GE3
DescriptionMOSFET 100V Vds 20V Vgs SOT-23MOSFET -20V Vds 12V Vgs SOT-23MOSFET N-CH 100V 3.1A SOT-23
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-23-3SOT-23-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelP-Channel-
Vds Drain Source Breakdown Voltage100 V20 V-
Id Continuous Drain Current3.1 A6 A-
Rds On Drain Source Resistance102 mOhms34 mOhms-
Vgs th Gate Source Threshold Voltage1.2 V600 mV-
Vgs Gate Source Voltage20 V10 V-
Qg Gate Charge10.4 nC10 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation2.5 W2.5 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameTrenchFETTrenchFET-
PackagingReelReel-
SeriesSI2SI2-
Transistor Type1 N-Channel1 P-Channel-
BrandVishay / SiliconixVishay / Siliconix-
Forward Transconductance Min5 S15 S-
Fall Time20 ns9 ns-
Product TypeMOSFETMOSFET-
Rise Time68 ns20 ns-
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time14 ns28 ns-
Typical Turn On Delay Time40 ns22 ns-
Unit Weight0.000282 oz0.000282 oz-
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SI2392ADS-T1-GE3 MOSFET 100V Vds 20V Vgs SOT-23
SI2399DS-T1-GE3 MOSFET -20V Vds 12V Vgs SOT-23
Vishay
Vishay
SI2392ADS-T1-GE3 IGBT Transistors MOSFET 100V .126ohm@10V 3.1A N-Ch T-FET
SI2399DS-T1-GE3 MOSFET P-CH 20V 6A SOT-23
SI2392DS-T1-GE3 MOSFET N-CH 100V 3.1A SOT-23
SI2392/3442 New and Original
SI2399CDS-T1-GE3 New and Original
SI2399DS-T1-E3 New and Original
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