 |  | | |
| PartNumber | SI3410DV-T1-GE3 | SI3415-TP | SI3415A-TP |
| Description | MOSFET 30V Vds 20V Vgs TSOP-6 | MOSFET 4A, 20V, P channel MOSFET | MOSFET -20V, -4.2A,P Channe l Mosfet |
| Manufacturer | Vishay | Micro Commercial Components (MCC) | Micro Commercial Components (MCC) |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TSOP-6 | SOT-23-3 | SOT-23-3 |
| Tradename | TrenchFET | - | - |
| Packaging | Reel | Reel | Reel |
| Height | 1.1 mm | - | - |
| Length | 3.05 mm | - | - |
| Series | SI3 | P-Channel Polarity | P-Channel Polarity |
| Width | 1.65 mm | - | - |
| Brand | Vishay / Siliconix | Micro Commercial Components (MCC) | Micro Commercial Components (MCC) |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Part # Aliases | SI3410DV-GE3 | - | - |
| Unit Weight | 0.000705 oz | 0.000282 oz | - |
| Number of Channels | - | 1 Channel | 1 Channel |
| Transistor Polarity | - | P-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | - | 20 V | 20 V |
| Id Continuous Drain Current | - | 4 A | 4 A |
| Rds On Drain Source Resistance | - | 50 mOhms | 45 mOhms |
| Vgs th Gate Source Threshold Voltage | - | 1 V | 900 mV |
| Vgs Gate Source Voltage | - | 8 V | 10 V |
| Qg Gate Charge | - | 17.2 nC | 12 nC |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Maximum Operating Temperature | - | + 150 C | + 150 C |
| Pd Power Dissipation | - | 350 mW | 1.4 W |
| Configuration | - | Single | Single |
| Channel Mode | - | Enhancement | Enhancement |
| Transistor Type | - | 1 P-Channel | - |
| Forward Transconductance Min | - | 8 S | 8 S |
| Fall Time | - | 35 ns | 25 ns |
| Rise Time | - | 17 ns | 10 ns |
| Typical Turn Off Delay Time | - | 94 ns | 19 ns |
| Typical Turn On Delay Time | - | 9.5 ns | 12 ns |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI3417DV-T1-GE3 | MOSFET -30V Vds 20V Vgs TSOP-6 | |
| SI3410DV-T1-GE3 | MOSFET 30V Vds 20V Vgs TSOP-6 | ||
Micro Commercial Components (MCC) |
SI3415-TP | MOSFET 4A, 20V, P channel MOSFET | |
| SI3415A-TP | MOSFET -20V, -4.2A,P Channe l Mosfet | ||
Vishay |
SI3417DV-T1-GE3 | IGBT Transistors MOSFET -30V .0252ohm@-10V -8A P-Ch T-FET | |
| SI3410DV-T1-E3 | MOSFET N-CH 30V 8A 6-TSOP | ||
| SI3410DV-T1-GE3 | MOSFET N-CH 30V 8A 6-TSOP | ||
| SI3410DV | New and Original | ||
| SI3410DV-T1-QE3 | New and Original | ||
| SI3415-FT | New and Original | ||
| SI3417DV-T1-GE3-CUT TAPE | New and Original |