 |  |  | |
| PartNumber | SI3483DDV-T1-GE3 | SI3483DV-T1-E3 | SI3483DV-T1 |
| Description | MOSFET P-Channel 30 V (D-S) MOSFET | MOSFET RECOMMENDED ALT 781-SI3483CDV-GE3 | |
| Manufacturer | Vishay | Vishay | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TSOP-6 | TSOP-6 | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | - 30 V | - | - |
| Id Continuous Drain Current | - 8 A | - | - |
| Vgs th Gate Source Threshold Voltage | - 2.2 V | - | - |
| Vgs Gate Source Voltage | - 20 V, + 16 V | - | - |
| Qg Gate Charge | 9.5 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | TrenchFET | TrenchFET | - |
| Packaging | Reel | Reel | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | - |
| Fall Time | 40 ns | - | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 33 ns | - | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 30 ns | - | - |
| Typical Turn On Delay Time | 15 ns | - | - |
| Series | - | SI3 | - |
| Part # Aliases | - | SI3483DV-E3 | - |
| Unit Weight | - | 0.000705 oz | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI3483DDV-T1-GE3 | MOSFET P-Channel 30 V (D-S) MOSFET | |
| SI3483DV-T1-E3 | MOSFET RECOMMENDED ALT 781-SI3483CDV-GE3 | ||
| SI3483DV-T1-GE3 | MOSFET RECOMMENDED ALT 781-SI3483CDV-GE3 | ||
| SI3483DV-T1 | New and Original | ||
Vishay |
SI3483DV-T1-E3 | MOSFET P-CH 30V 4.7A 6-TSOP | |
| SI3483DV-T1-GE3 | MOSFET P-CH 30V 4.7A 6-TSOP |