PartNumber | SI419 | SI4190 | SI4190ADY |
Description | |||
Manufacturer | - | Vishay Siliconix | - |
Product Category | - | IC Chips | - |
Series | - | TrenchFETR | - |
Packaging | - | Digi-ReelR Alternate Packaging | - |
Part Aliases | - | SI4190ADY-GE3 | - |
Unit Weight | - | 0.017870 oz | - |
Mounting Style | - | SMD/SMT | - |
Tradename | - | ThunderFET TrenchFET | - |
Package Case | - | 8-SOIC (0.154", 3.90mm Width) | - |
Technology | - | Si | - |
Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
Mounting Type | - | Surface Mount | - |
Number of Channels | - | 1 Channel | - |
Supplier Device Package | - | 8-SO | - |
Configuration | - | Single | - |
FET Type | - | MOSFET N-Channel, Metal Oxide | - |
Power Max | - | 6W | - |
Transistor Type | - | 1 N-Channel | - |
Drain to Source Voltage Vdss | - | 100V | - |
Input Capacitance Ciss Vds | - | 1970pF @ 50V | - |
FET Feature | - | Standard | - |
Current Continuous Drain Id 25°C | - | 18.4A (Tc) | - |
Rds On Max Id Vgs | - | 8.8 mOhm @ 15A, 10V | - |
Vgs th Max Id | - | 2.8V @ 250μA | - |
Gate Charge Qg Vgs | - | 67nC @ 10V | - |
Pd Power Dissipation | - | 6 W | - |
Vgs Gate Source Voltage | - | 2.8 V | - |
Id Continuous Drain Current | - | 18.4 A | - |
Vds Drain Source Breakdown Voltage | - | 100 V | - |
Vgs th Gate Source Threshold Voltage | - | 2.8 V | - |
Rds On Drain Source Resistance | - | 8.8 mOhms | - |
Transistor Polarity | - | N-Channel | - |
Qg Gate Charge | - | 20.7 nC | - |