SI419

SI419 vs SI4190 vs SI4190ADY

 
PartNumberSI419SI4190SI4190ADY
Description
Manufacturer-Vishay Siliconix-
Product Category-IC Chips-
Series-TrenchFETR-
Packaging-Digi-ReelR Alternate Packaging-
Part Aliases-SI4190ADY-GE3-
Unit Weight-0.017870 oz-
Mounting Style-SMD/SMT-
Tradename-ThunderFET TrenchFET-
Package Case-8-SOIC (0.154", 3.90mm Width)-
Technology-Si-
Operating Temperature--55°C ~ 150°C (TJ)-
Mounting Type-Surface Mount-
Number of Channels-1 Channel-
Supplier Device Package-8-SO-
Configuration-Single-
FET Type-MOSFET N-Channel, Metal Oxide-
Power Max-6W-
Transistor Type-1 N-Channel-
Drain to Source Voltage Vdss-100V-
Input Capacitance Ciss Vds-1970pF @ 50V-
FET Feature-Standard-
Current Continuous Drain Id 25°C-18.4A (Tc)-
Rds On Max Id Vgs-8.8 mOhm @ 15A, 10V-
Vgs th Max Id-2.8V @ 250μA-
Gate Charge Qg Vgs-67nC @ 10V-
Pd Power Dissipation-6 W-
Vgs Gate Source Voltage-2.8 V-
Id Continuous Drain Current-18.4 A-
Vds Drain Source Breakdown Voltage-100 V-
Vgs th Gate Source Threshold Voltage-2.8 V-
Rds On Drain Source Resistance-8.8 mOhms-
Transistor Polarity-N-Channel-
Qg Gate Charge-20.7 nC-
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SI4190ADY-T1-GE3 MOSFET 100V Vds 20V Vgs SO-8
SI4196DY-T1-E3 MOSFET
SI419 New and Original
SI4190 New and Original
SI4190ADY New and Original
SI4190ADY-T1-E3 New and Original
SI4190DY-T1-E3 New and Original
Vishay
Vishay
SI4190ADY-T1-GE3 MOSFET N-CH 100V 18.4A 8SO
SI4190DY-T1-GE3 MOSFET N-CH 100V 20A 8-SOIC
SI4196DY-T1-GE3 MOSFET N-CH 20V 8A 8SOIC
SI4196DY-T1-E3 MOSFET N-CH 20V 8A 8SOIC
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