SI4214DDY-T1

SI4214DDY-T1-GE3 vs SI4214DDY-T1-E3 vs SI4214DDY-T1

 
PartNumberSI4214DDY-T1-GE3SI4214DDY-T1-E3SI4214DDY-T1
DescriptionMOSFET 30V Vds 20V Vgs SO-8MOSFET 30V Vds 20V Vgs SO-8
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSEY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSO-8SO-8-
Number of Channels2 Channel2 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage30 V30 V-
Id Continuous Drain Current8.5 A8.5 A-
Rds On Drain Source Resistance19.5 mOhms19.5 mOhms-
Vgs th Gate Source Threshold Voltage1.2 V1.2 V-
Vgs Gate Source Voltage10 V20 V-
Qg Gate Charge14.5 nC22 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation3.1 W3.1 W-
ConfigurationDualDual-
Channel ModeEnhancementEnhancement-
TradenameTrenchFET--
PackagingReelReel-
Height1.75 mm--
Length4.9 mm--
SeriesSI4--
Transistor Type2 N-Channel2 N-Channel-
Width3.9 mm--
BrandVishay / SiliconixVishay / Siliconix-
Forward Transconductance Min27 S27 S-
Fall Time7 ns12 ns-
Product TypeMOSFETMOSFET-
Rise Time10 ns45 ns-
Factory Pack Quantity25002500-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time15 ns18 ns-
Typical Turn On Delay Time7 ns14 ns-
Part # AliasesSI4920DY-T1-E3-S--
Unit Weight0.017870 oz0.002610 oz-
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SI4214DDY-T1-GE3 MOSFET 30V Vds 20V Vgs SO-8
SI4214DDY-T1-E3 MOSFET 30V Vds 20V Vgs SO-8
SI4214DDY-T1 New and Original
SI4214DDY-T1-GE3,SI4214D New and Original
SI4214DDY-T1-GE3,SI4214DDY, New and Original
Vishay
Vishay
SI4214DDY-T1-E3 MOSFET 2N-CH 30V 8.5A 8SO
SI4214DDY-T1-GE3 MOSFET 2N-CH 30V 8.5A 8-SOIC
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