PartNumber | SI4214DDY-T1-GE3 | SI4214DDY-T1-E3 | SI4214DDY-T1 |
Description | MOSFET 30V Vds 20V Vgs SO-8 | MOSFET 30V Vds 20V Vgs SO-8 | |
Manufacturer | Vishay | Vishay | - |
Product Category | MOSFET | MOSFET | - |
RoHS | E | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | SO-8 | SO-8 | - |
Number of Channels | 2 Channel | 2 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
Id Continuous Drain Current | 8.5 A | 8.5 A | - |
Rds On Drain Source Resistance | 19.5 mOhms | 19.5 mOhms | - |
Vgs th Gate Source Threshold Voltage | 1.2 V | 1.2 V | - |
Vgs Gate Source Voltage | 10 V | 20 V | - |
Qg Gate Charge | 14.5 nC | 22 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 3.1 W | 3.1 W | - |
Configuration | Dual | Dual | - |
Channel Mode | Enhancement | Enhancement | - |
Tradename | TrenchFET | - | - |
Packaging | Reel | Reel | - |
Height | 1.75 mm | - | - |
Length | 4.9 mm | - | - |
Series | SI4 | - | - |
Transistor Type | 2 N-Channel | 2 N-Channel | - |
Width | 3.9 mm | - | - |
Brand | Vishay / Siliconix | Vishay / Siliconix | - |
Forward Transconductance Min | 27 S | 27 S | - |
Fall Time | 7 ns | 12 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 10 ns | 45 ns | - |
Factory Pack Quantity | 2500 | 2500 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 15 ns | 18 ns | - |
Typical Turn On Delay Time | 7 ns | 14 ns | - |
Part # Aliases | SI4920DY-T1-E3-S | - | - |
Unit Weight | 0.017870 oz | 0.002610 oz | - |