SI4346D

SI4346DY-T1-GE3 vs SI4346DY-T1 vs SI4346DY-T1-E3

 
PartNumberSI4346DY-T1-GE3SI4346DY-T1SI4346DY-T1-E3
DescriptionMOSFET RECOMMENDED ALT 781-SI4174DY-T1-GE3MOSFET N-CH 30V 5.9A 8-SOIC
ManufacturerVishay-Vishay Siliconix
Product CategoryMOSFET-FETs - Single
RoHSE--
TechnologySi-Si
TradenameTrenchFET--
PackagingReel-Digi-ReelR Alternate Packaging
SeriesSI4-TrenchFETR
BrandVishay / Siliconix--
Product TypeMOSFET--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Part # AliasesSI4346DY-GE3--
Unit Weight0.006596 oz-0.006596 oz
Part Aliases--SI4346DY-E3
Mounting Style--SMD/SMT
Package Case--8-SOIC (0.154", 3.90mm Width)
Operating Temperature---55°C ~ 150°C (TJ)
Mounting Type--Surface Mount
Number of Channels--1 Channel
Supplier Device Package--8-SO
Configuration--Single
FET Type--MOSFET N-Channel, Metal Oxide
Power Max--1.31W
Transistor Type--1 N-Channel
Drain to Source Voltage Vdss--30V
Input Capacitance Ciss Vds---
FET Feature--Standard
Current Continuous Drain Id 25°C--5.9A (Ta)
Rds On Max Id Vgs--23 mOhm @ 8A, 10V
Vgs th Max Id--2V @ 250μA
Gate Charge Qg Vgs--10nC @ 4.5V
Pd Power Dissipation--1.31 W
Maximum Operating Temperature--+ 150 C
Minimum Operating Temperature--- 55 C
Fall Time--11 ns
Rise Time--11 ns
Vgs Gate Source Voltage--12 V
Id Continuous Drain Current--5.9 A
Vds Drain Source Breakdown Voltage--30 V
Rds On Drain Source Resistance--23 mOhms
Transistor Polarity--N-Channel
Typical Turn Off Delay Time--40 ns
Typical Turn On Delay Time--9 ns
Channel Mode--Enhancement
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SI4346DY-T1-GE3 MOSFET RECOMMENDED ALT 781-SI4174DY-T1-GE3
Vishay
Vishay
SI4346DY-T1-GE3 RF Bipolar Transistors MOSFET 30V 8.0A 2.5W 23mohm @ 10V
SI4346DY-T1-E3 MOSFET N-CH 30V 5.9A 8-SOIC
SI4346DY-T1 New and Original
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