 | | | |
| PartNumber | SI4435DDY-T1-GE3 | SI4435DY | SI4435DDY-T1-E3 |
| Description | MOSFET -30V Vds 20V Vgs SO-8 | MOSFET 30V SinGLE P-Ch | MOSFET -30V Vds 20V Vgs SO-8 |
| Manufacturer | Vishay | ON Semiconductor | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | E | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SO-8 | SO-8 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | P-Channel | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
| Id Continuous Drain Current | 11.4 A | 8.8 A | - |
| Rds On Drain Source Resistance | 24 mOhms | 20 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1 V | - | - |
| Vgs Gate Source Voltage | 10 V | 20 V | - |
| Qg Gate Charge | 50 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 175 C | - |
| Pd Power Dissipation | 5 W | 2.5 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | TrenchFET | PowerTrench | TrenchFET |
| Packaging | Reel | Reel | Reel |
| Series | SI4 | SI4435DY | SI4 |
| Transistor Type | 1 P-Channel | 1 P-Channel | - |
| Brand | Vishay / Siliconix | ON Semiconductor / Fairchild | Vishay / Siliconix |
| Forward Transconductance Min | 23 S | 24 S | - |
| Fall Time | 12 ns | 25 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 8 ns | 13.5 ns | - |
| Factory Pack Quantity | 2500 | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 45 ns | 42 ns | - |
| Typical Turn On Delay Time | 10 ns | 13 ns | - |
| Part # Aliases | SI4435DDY-GE3 | SI4435DY_NL | SI4435DDY-E3 |
| Unit Weight | 0.006596 oz | 0.004586 oz | 0.006596 oz |
| Height | - | 1.75 mm | - |
| Length | - | 4.9 mm | - |
| Type | - | MOSFET | - |
| Width | - | 3.9 mm | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI4435DDY-T1-GE3 | MOSFET -30V Vds 20V Vgs SO-8 | |
| SI4435DDY-T1-E3 | MOSFET -30V Vds 20V Vgs SO-8 | ||
ON Semiconductor / Fairchild |
SI4435DY | MOSFET 30V SinGLE P-Ch | |
Infineon / IR |
SI4435DYTRPBF | MOSFET HEXFET P-CH Low 0.020 Ohm -30V | |
| SI4435DDY-T1-E3-CUT TAPE | New and Original | ||
| SI4435DDY-T1-GE3-CUT TAPE | New and Original | ||
| SI4435DY-CUT TAPE | New and Original | ||
| SI4435DYTRPBF-CUT TAPE | New and Original | ||
| SI4435D | New and Original | ||
| SI4435D(B)DY-T1-(G)E3 | New and Original | ||
| SI4435DDY | New and Original | ||
| SI4435DDY-T1 | New and Original | ||
| SI4435DDY-T1-E | New and Original | ||
| SI4435DDY-T1-E3 SOP8 | New and Original | ||
| SI4435DDY-T1-E3. | P-CHANNEL 30-V (D-S) MOSFET ROHS COMPLIANT: NO | ||
| SI4435DDY-TI-GE3 | New and Original | ||
| SI4435DS | New and Original | ||
| SI4435DY-A | New and Original | ||
| SI4435DY-NL | New and Original | ||
| SI4435DY-REVA | MOSFET 30V 8A 2.5W | ||
| SI4435DY-REVA-E3 | New and Original | ||
| SI4435DY-T1 | MOSFET Transistor, P-Channel, SO | ||
| SI4435DY-T1-A-E3 | MOSFET RECOMMENDED ALT 781-SI4435DDY-GE3 | ||
| SI4435DY-T1-A-E3 SI4 | New and Original | ||
| SI4435DY-T1-A-E3-PBF | New and Original | ||
| SI4435DY-T1-E3 | New and Original | ||
| SI4435DY-T1-E3. | New and Original | ||
| SI4435DY-T1-GE3 | New and Original | ||
| SI4435DY-T1-REVA | MOSFET 30V 8A 2.5W | ||
| SI4435DY-TE2 | New and Original | ||
| SI4435DY-TI | New and Original | ||
| SI4435DY-TI-REVA | New and Original | ||
| SI4435DY-TR | New and Original | ||
| SI4435DY/BDY-T1-E3 | New and Original | ||
Vishay |
SI4435DDY-T1-E3 | MOSFET P-CH 30V 11.4A 8SOIC | |
| SI4435DDY-T1-GE3 | MOSFET P-CH 30V 11.4A 8-SOIC | ||
ON Semiconductor |
SI4435DY | MOSFET P-CH 30V 8.8A 8-SOIC | |
Infineon Technologies |
SI4435DYPBF | MOSFET P-CH 30V 8A 8-SOIC | |
| SI4435DYTR | MOSFET P-CH 30V 8A 8-SOIC | ||
| SI4435DYTRPBF | MOSFET P-CH 30V 8A 8-SOIC |