PartNumber | SI4860DY-T1-E3 | SI4860DY-T1 | SI4860DY |
Description | IGBT Transistors MOSFET 30V 16A 1.6W | MOSFET 30V 16A 1.6W | |
Manufacturer | VISHAY | - | - |
Product Category | FETs - Single | - | - |
Packaging | Reel | - | - |
Part Aliases | SI4860DY-E3 | - | - |
Unit Weight | 0.017870 oz | - | - |
Mounting Style | SMD/SMT | - | - |
Tradename | TrenchFET | - | - |
Package Case | SO-8 | - | - |
Technology | Si | - | - |
Number of Channels | 1 Channel | - | - |
Configuration | Single | - | - |
Transistor Type | 1 N-Channel | - | - |
Pd Power Dissipation | 1.6 W | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Fall Time | 12 ns | - | - |
Rise Time | 12 ns | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Id Continuous Drain Current | 11 A | - | - |
Vds Drain Source Breakdown Voltage | 30 V | - | - |
Rds On Drain Source Resistance | 8 mOhms | - | - |
Transistor Polarity | N-Channel | - | - |
Typical Turn Off Delay Time | 46 ns | - | - |
Typical Turn On Delay Time | 18 ns | - | - |
Channel Mode | Enhancement | - | - |