PartNumber | SI5402DC-T2 | SI5402DC-T1 | SI5402DC-T1-E3. |
Description | MOSFET 30V 6.7A 2.5W 35mohm @ 10V | MOSFET RECOMMENDED ALT 781-SI5468DC-GE3 | |
Manufacturer | Vishay / Siliconix | - | - |
Product Category | Transistors - FETs, MOSFETs - Single | - | - |
Packaging | Tube | - | - |
Unit Weight | 0.002998 oz | - | - |
Mounting Style | SMD/SMT | - | - |
Tradename | TrenchFET | - | - |
Package Case | ChipFET-8 | - | - |
Technology | Si | - | - |
Number of Channels | 1 Channel | - | - |
Configuration | Single | - | - |
Transistor Type | 1 N-Channel | - | - |
Pd Power Dissipation | 2.5 W | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Fall Time | 10 ns | - | - |
Rise Time | 10 ns | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Id Continuous Drain Current | 6.7 A | - | - |
Vds Drain Source Breakdown Voltage | 30 V | - | - |
Rds On Drain Source Resistance | 35 mOhms | - | - |
Transistor Polarity | N-Channel | - | - |
Typical Turn Off Delay Time | 25 ns | - | - |
Typical Turn On Delay Time | 10 ns | - | - |
Channel Mode | Enhancement | - | - |