PartNumber | SI5411EDU-T1-GE3 | SI5410DU-T1-GE3 | SI5414DC-T1-GE3 |
Description | MOSFET RECOMMENDED ALT 781-SI5419DU-GE3 | MOSFET RECOMMENDED ALT 781-SI5418DU-T1-GE3 | MOSFET 20V 6.0A 6.3W 17mohm @ 4.5V |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | PowerPAK-ChipFET-8 | PowerPAK-ChipFET-8 | ChipFET-8 |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | P-Channel | - | - |
Vds Drain Source Breakdown Voltage | 12 V | - | - |
Id Continuous Drain Current | 25 A | - | - |
Rds On Drain Source Resistance | 6.6 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 900 mV | - | - |
Vgs Gate Source Voltage | 8 V | - | - |
Qg Gate Charge | 105 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 31 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Tradename | TrenchFET | TrenchFET | TrenchFET |
Packaging | Reel | Reel | Reel |
Height | 0.75 mm | 0.75 mm | 1.1 mm |
Length | 3 mm | 3 mm | 3.05 mm |
Series | SI54 | SI54 | SI5 |
Transistor Type | 1 P-Channel | - | - |
Width | 1.8 mm | 1.8 mm | 1.65 mm |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Forward Transconductance Min | 45 S | - | - |
Fall Time | 35 ns | - | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 30 ns | - | - |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 70 ns | - | - |
Typical Turn On Delay Time | 30 ns | - | - |
Part # Aliases | - | SI5410DU-GE3 | SI5414DC-GE3 |
Unit Weight | - | - | 0.002998 oz |