 | |  | |
| PartNumber | SI5908DC-T1-E3 | SI5908DC-T1-GE3 | SI5908DC |
| Description | MOSFET 20V Vds 8V Vgs 1206-8 ChipFET | MOSFET 20V Vds 8V Vgs 1206-8 ChipFET | |
| Manufacturer | Vishay | Vishay | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Tradename | TrenchFET | TrenchFET | - |
| Packaging | Reel | Reel | - |
| Series | SI54 | SI5 | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Part # Aliases | SI5908DC-E3 | SI5904DC-T1-GE3 SI5904DWF | - |
| Unit Weight | 0.002998 oz | 0.002998 oz | - |
| Mounting Style | - | SMD/SMT | - |
| Package / Case | - | ChipFET-8 | - |
| Number of Channels | - | 2 Channel | - |
| Transistor Polarity | - | N-Channel | - |
| Vds Drain Source Breakdown Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 5.9 A | - |
| Rds On Drain Source Resistance | - | 40 mOhms | - |
| Vgs th Gate Source Threshold Voltage | - | 400 mV | - |
| Vgs Gate Source Voltage | - | 8 V | - |
| Qg Gate Charge | - | 7.5 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Pd Power Dissipation | - | 2.1 W | - |
| Configuration | - | Dual | - |
| Channel Mode | - | Enhancement | - |
| Transistor Type | - | 2 N-Channel | - |
| Forward Transconductance Min | - | 22 S | - |
| Fall Time | - | 12 ns | - |
| Rise Time | - | 36 ns | - |
| Typical Turn Off Delay Time | - | 30 ns | - |
| Typical Turn On Delay Time | - | 20 ns | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI5908DC-T1-E3 | MOSFET 20V Vds 8V Vgs 1206-8 ChipFET | |
| SI5908DC-T1-GE3 | MOSFET 20V Vds 8V Vgs 1206-8 ChipFET | ||
| SI5908DC | New and Original | ||
| SI5908DCT1GE3 | Small Signal Field-Effect Transistor, 4.4A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
Vishay |
SI5908DC-T1-E3 | MOSFET 2N-CH 20V 4.4A 1206-8 | |
| SI5908DC-T1-GE3 | MOSFET 2N-CH 20V 4.4A 1206-8 |