 |  |  | |
| PartNumber | SI5920DC-T1-E3 | SI5920DC | SI5920DC-T1-GE3 |
| Description | MOSFET 8.0V 4.0A 3.12W | MOSFET 2N-CH 8V 4A 1206-8 | |
| Manufacturer | Vishay | - | Vishay Siliconix |
| Product Category | MOSFET | - | FETs - Arrays |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | ChipFET-8 | - | - |
| Tradename | TrenchFET | - | - |
| Packaging | Reel | - | Digi-ReelR |
| Height | 1.1 mm | - | - |
| Length | 3.05 mm | - | - |
| Series | SI5 | - | TrenchFETR |
| Width | 1.65 mm | - | - |
| Brand | Vishay / Siliconix | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Part # Aliases | SI5920DC-E3 | - | - |
| Unit Weight | 0.002998 oz | - | - |
| Package Case | - | - | 8-SMD, Flat Lead |
| Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | 1206-8 ChipFET |
| FET Type | - | - | 2 N-Channel (Dual) |
| Power Max | - | - | 3.12W |
| Drain to Source Voltage Vdss | - | - | 8V |
| Input Capacitance Ciss Vds | - | - | 680pF @ 4V |
| FET Feature | - | - | Logic Level Gate |
| Current Continuous Drain Id 25°C | - | - | 4A |
| Rds On Max Id Vgs | - | - | 32 mOhm @ 6.8A, 4.5V |
| Vgs th Max Id | - | - | 1V @ 250μA |
| Gate Charge Qg Vgs | - | - | 12nC @ 5V |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI5920DC-T1-E3 | MOSFET 8.0V 4.0A 3.12W | |
| SI5920DC | New and Original | ||
Vishay |
SI5920DC-T1-E3 | MOSFET 2N-CH 8V 4A 1206-8 | |
| SI5920DC-T1-GE3 | MOSFET 2N-CH 8V 4A 1206-8 | ||
| SI5922DU-T1-GE3 | MOSFET 2 N-CH 30V 6A POWERPAK |