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| PartNumber | SI6954ADQ-T1-GE3 | SI6954ADQ-T1-E3 | SI6955ADQ-T1-E3 |
| Description | MOSFET 30V Vds 20V Vgs TSSOP-8 | MOSFET 30V Vds 20V Vgs TSSOP-8 | MOSFET RECOMMENDED ALT 781-SI6562CDQ-GE3 |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | E | Y |
| Technology | Si | Si | Si |
| Tradename | TrenchFET | TrenchFET | TrenchFET |
| Packaging | Reel | Reel | Reel |
| Series | SI6 | SI6 | SI6 |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Part # Aliases | SI6954ADQ-GE3 | SI6954ADQ-E3 | SI6955ADQ-E3 |
| Unit Weight | 0.005573 oz | 0.005573 oz | 0.005573 oz |
| Mounting Style | - | SMD/SMT | - |
| Package / Case | - | TSSOP-8 | - |
| Number of Channels | - | 2 Channel | - |
| Transistor Polarity | - | N-Channel | - |
| Vds Drain Source Breakdown Voltage | - | 30 V | - |
| Id Continuous Drain Current | - | 3.4 A | - |
| Rds On Drain Source Resistance | - | 53 mOhms | - |
| Vgs th Gate Source Threshold Voltage | - | 1 V | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Qg Gate Charge | - | 16 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Pd Power Dissipation | - | 1 W | - |
| Configuration | - | Dual | - |
| Channel Mode | - | Enhancement | - |
| Height | - | 1.2 mm | - |
| Length | - | 4.4 mm | - |
| Transistor Type | - | 2 N-Channel | - |
| Width | - | 3 mm | - |
| Forward Transconductance Min | - | 10 S | - |
| Fall Time | - | 8 ns | - |
| Rise Time | - | 10 ns | - |
| Typical Turn Off Delay Time | - | 23 ns | - |
| Typical Turn On Delay Time | - | 12 ns | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI6954ADQ-T1-GE3 | MOSFET 30V Vds 20V Vgs TSSOP-8 | |
| SI6954ADQ-T1-E3 | MOSFET 30V Vds 20V Vgs TSSOP-8 | ||
| SI6955ADQ-T1-E3 | MOSFET RECOMMENDED ALT 781-SI6562CDQ-GE3 | ||
| SI6955ADQ-T1-GE3 | MOSFET RECOMMENDED ALT 781-SI6562CDQ-GE3 | ||
| SI6953DQ | MOSFET 20V/20V P-Channel Dual | ||
| SI6953DQ-T1 | MOSFET 20V 1.9A 1W | ||
| SI6953DQ-T1-E3 | New and Original | ||
| SI6953DQ-T1-GE3 | New and Original | ||
| SI6954 | New and Original | ||
| SI6954ADQ | TRANS MOSFET N-CH 30V 3.1A, RL | ||
| SI6954ADQ-T2 | New and Original | ||
| SI6954DQ | New and Original | ||
| SI6954DQ-T1 | 3900 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | ||
| SI6954DQT1 | Small Signal Field-Effect Transistor, 3.9A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| SI6955ADQ-T1 | MOSFET RECOMMENDED ALT 781-SI6562CDQ-GE3 | ||
| SI6955DQ | MOSFET 30V/20V PCh MOSFET Dual | ||
| SI6955DQ 955 | New and Original | ||
| SI6955DQ-T1 | MOSFET 30V 2.5A 1W | ||
| SI6955DQ-T1-E3 | MOSFET 30V 2.5A 1W | ||
| SI6955DQ-T1-GE3 | New and Original | ||
| SI6955DQT1 | Small Signal Field-Effect Transistor, 2.5A I(D), 30V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| SI6956DQ | New and Original | ||
| SI6956DQ-T1 | New and Original | ||
| SI6956DQ-T1-E3 | New and Original | ||
| SI6956DQ-T1-GE3 | New and Original | ||
Vishay |
SI6954ADQ-T1-E3 | MOSFET 2N-CH 30V 3.1A 8TSSOP | |
| SI6954ADQ-T1-GE3 | MOSFET 2N-CH 30V 3.1A 8TSSOP | ||
| SI6955ADQ-T1-E3 | MOSFET 2P-CH 30V 2.5A 8-TSSOP | ||
| SI6955ADQ-T1-GE3 | MOSFET 2P-CH 30V 2.5A 8-TSSOP |