PartNumber | SI6973BDQ-T1-E3 | SI6973DQ | SI6973DQ-T1 |
Description | MOSFET RECOMMENDED ALT 781-SI6913DQ-GE3 | ||
Manufacturer | - | - | Vishay Siliconix |
Product Category | - | - | FETs - Arrays |
Series | - | - | TrenchFETR |
Packaging | - | - | Tape & Reel (TR) |
Part Aliases | - | - | SI6973DQ-E3 |
Unit Weight | - | - | 0.005573 oz |
Mounting Style | - | - | SMD/SMT |
Tradename | - | - | TrenchFET |
Package Case | - | - | 8-TSSOP (0.173", 4.40mm Width) |
Technology | - | - | Si |
Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
Mounting Type | - | - | Surface Mount |
Number of Channels | - | - | 2 Channel |
Supplier Device Package | - | - | 8-TSSOP |
Configuration | - | - | Dual |
FET Type | - | - | 2 P-Channel (Dual) |
Power Max | - | - | 830mW |
Transistor Type | - | - | 2 P-Channel |
Drain to Source Voltage Vdss | - | - | 20V |
Input Capacitance Ciss Vds | - | - | - |
FET Feature | - | - | Logic Level Gate |
Current Continuous Drain Id 25°C | - | - | 4.1A |
Rds On Max Id Vgs | - | - | 30 mOhm @ 4.8A, 4.5V |
Vgs th Max Id | - | - | 450mV @ 250μA (Min) |
Gate Charge Qg Vgs | - | - | 30nC @ 4.5V |
Pd Power Dissipation | - | - | 830 mW |
Maximum Operating Temperature | - | - | + 150 C |
Minimum Operating Temperature | - | - | - 55 C |
Fall Time | - | - | 27 ns |
Rise Time | - | - | 27 ns |
Vgs Gate Source Voltage | - | - | 8 V |
Id Continuous Drain Current | - | - | 4.1 A |
Vds Drain Source Breakdown Voltage | - | - | - 20 V |
Rds On Drain Source Resistance | - | - | 30 mOhms |
Transistor Polarity | - | - | P-Channel |
Typical Turn Off Delay Time | - | - | 93 ns |
Typical Turn On Delay Time | - | - | 27 ns |
Channel Mode | - | - | Enhancement |