SI6973

SI6973BDQ-T1-E3 vs SI6973DQ vs SI6973DQ-T1

 
PartNumberSI6973BDQ-T1-E3SI6973DQSI6973DQ-T1
DescriptionMOSFET RECOMMENDED ALT 781-SI6913DQ-GE3
Manufacturer--Vishay Siliconix
Product Category--FETs - Arrays
Series--TrenchFETR
Packaging--Tape & Reel (TR)
Part Aliases--SI6973DQ-E3
Unit Weight--0.005573 oz
Mounting Style--SMD/SMT
Tradename--TrenchFET
Package Case--8-TSSOP (0.173", 4.40mm Width)
Technology--Si
Operating Temperature---55°C ~ 150°C (TJ)
Mounting Type--Surface Mount
Number of Channels--2 Channel
Supplier Device Package--8-TSSOP
Configuration--Dual
FET Type--2 P-Channel (Dual)
Power Max--830mW
Transistor Type--2 P-Channel
Drain to Source Voltage Vdss--20V
Input Capacitance Ciss Vds---
FET Feature--Logic Level Gate
Current Continuous Drain Id 25°C--4.1A
Rds On Max Id Vgs--30 mOhm @ 4.8A, 4.5V
Vgs th Max Id--450mV @ 250μA (Min)
Gate Charge Qg Vgs--30nC @ 4.5V
Pd Power Dissipation--830 mW
Maximum Operating Temperature--+ 150 C
Minimum Operating Temperature--- 55 C
Fall Time--27 ns
Rise Time--27 ns
Vgs Gate Source Voltage--8 V
Id Continuous Drain Current--4.1 A
Vds Drain Source Breakdown Voltage--- 20 V
Rds On Drain Source Resistance--30 mOhms
Transistor Polarity--P-Channel
Typical Turn Off Delay Time--93 ns
Typical Turn On Delay Time--27 ns
Channel Mode--Enhancement
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SI6973DQ-T1-E3 MOSFET RECOMMENDED ALT 781-SI6913DQ-GE3
Vishay
Vishay
SI6973DQ-T1-E3 RF Bipolar Transistors MOSFET 20V 4.8A 4.8W
SI6973DQ-T1-GE3 MOSFET 2P-CH 20V 4.1A 8TSSOP
SI6973BDQ-T1-E3 New and Original
SI6973DQ New and Original
SI6973DQ-T1 MOSFET RECOMMENDED ALT 781-SI6913DQ-GE3
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