PartNumber | SI7112DN-T1-E3 | SI7112DN-T1-GE3 | SI7113ADN-T1-GE3 |
Description | MOSFET 30V 17.8A 3.8W 7.5mohm @ 10V | MOSFET 30V 17.8A 3.8W 7.5mohm @ 10V | MOSFET -100V Vds 20V Vgs PowerPAK 1212-8 |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | E | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | PowerPAK-1212-8 | PowerPAK-1212-8 | PowerPAK-1212-8 |
Tradename | TrenchFET | TrenchFET | - |
Packaging | Reel | Reel | Reel |
Series | SI7 | SI7 | Si7113ADN |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Part # Aliases | SI7112DN-T1 | SI7112DN-GE3 | - |
Height | - | 1.04 mm | - |
Length | - | 3.3 mm | - |
Width | - | 3.3 mm | - |
Number of Channels | - | - | 1 Channel |
Transistor Polarity | - | - | P-Channel |
Vds Drain Source Breakdown Voltage | - | - | 100 V |
Id Continuous Drain Current | - | - | 10.8 A |
Rds On Drain Source Resistance | - | - | 186 mOhms |
Vgs th Gate Source Threshold Voltage | - | - | 1.1 V |
Vgs Gate Source Voltage | - | - | 20 V |
Qg Gate Charge | - | - | 5.65 nC |
Minimum Operating Temperature | - | - | - 55 C |
Maximum Operating Temperature | - | - | + 150 C |
Pd Power Dissipation | - | - | 27.8 W |
Configuration | - | - | Single |
Forward Transconductance Min | - | - | 8 S |
Fall Time | - | - | 1622 ns |
Rise Time | - | - | 40 ns |
Typical Turn Off Delay Time | - | - | 22 ns |
Typical Turn On Delay Time | - | - | 35 ns |