PartNumber | SI7110DN-T1-E3 | SI7110DN-T1-GE3 | SI7111EDN-T1-GE3 |
Description | MOSFET 20V 21.1A 0.0053Ohm | MOSFET 20V 21.1A 3.8W 5.3mohm @ 10V | MOSFET -30V Vds 12V Vgs PowerPAK 1212-8 |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | E | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | PowerPAK-1212-8 | PowerPAK-1212-8 | PowerPAK-1212-8 |
Tradename | TrenchFET | TrenchFET | - |
Packaging | Reel | Reel | Reel |
Height | 1.04 mm | 1.04 mm | 1.04 mm |
Length | 3.3 mm | 3.3 mm | 3.3 mm |
Series | SI7 | SI7 | SI7 |
Width | 3.3 mm | 3.3 mm | 3.3 mm |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Part # Aliases | SI7110DN-E3 | SI7110DN-GE3 | - |
Number of Channels | - | - | 1 Channel |
Transistor Polarity | - | - | P-Channel |
Vds Drain Source Breakdown Voltage | - | - | 30 V |
Id Continuous Drain Current | - | - | 60 A |
Rds On Drain Source Resistance | - | - | 7.2 mOhms |
Vgs th Gate Source Threshold Voltage | - | - | 1.6 V |
Vgs Gate Source Voltage | - | - | 12 V |
Qg Gate Charge | - | - | 85 nC |
Minimum Operating Temperature | - | - | - 55 C |
Maximum Operating Temperature | - | - | + 150 C |
Pd Power Dissipation | - | - | 52 W |
Configuration | - | - | Single |
Channel Mode | - | - | Enhancement |
Transistor Type | - | - | 1 P-Channel |
Forward Transconductance Min | - | - | 64 S |
Fall Time | - | - | 33 ns |
Rise Time | - | - | 40 ns |
Typical Turn Off Delay Time | - | - | 120 ns |
Typical Turn On Delay Time | - | - | 25 ns |