 | |  | |
| PartNumber | SI7386DP-T1-E3 | SI7386DP-T1-GE3 | SI7386DP-T1 |
| Description | MOSFET 30 Volt 19 Amp 5W | MOSFET 30V 19A 5.0W 7.0mohm @ 10V | |
| Manufacturer | Vishay | Vishay | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | E | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | PowerPAK-SO-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 12 A | - | - |
| Rds On Drain Source Resistance | 7 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.5 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 11.5 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 1.8 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | TrenchFET | TrenchFET | - |
| Packaging | Reel | Reel | - |
| Series | SI7 | SI7 | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | - |
| Forward Transconductance Min | 50 S | - | - |
| Fall Time | 10 ns | - | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 9 ns | - | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 35 ns | - | - |
| Typical Turn On Delay Time | 12 ns | - | - |
| Part # Aliases | SI7386DP-E3 | SI7386DP-GE3 | - |
| Unit Weight | 0.017870 oz | 0.017870 oz | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI7386DP-T1-E3 | MOSFET 30 Volt 19 Amp 5W | |
| SI7386DP-T1-GE3 | MOSFET 30V 19A 5.0W 7.0mohm @ 10V | ||
| SI7386DP-T1-GE3-CUT TAPE | New and Original | ||
| SI7386DP-T1 | New and Original | ||
Vishay |
SI7386DP-T1-E3 | MOSFET N-CH 30V 12A PPAK SO-8 | |
| SI7386DP-T1-GE3 | MOSFET N-CH 30V 12A PPAK SO-8 |