PartNumber | SI7464DP-T1-GE3 | SI7465DP-T1-GE3 | SI7465DP-T1-E3 |
Description | MOSFET 200V Vds 20V Vgs PowerPAK SO-8 | MOSFET -60V Vds 20V Vgs PowerPAK SO-8 | MOSFET -60V Vds 20V Vgs PowerPAK SO-8 |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | E | Y | E |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | PowerPAK-SO-8 | PowerPAK-SO-8 | SO-8 |
Tradename | TrenchFET | TrenchFET | TrenchFET |
Packaging | Reel | Reel | Reel |
Height | 1.04 mm | 1.04 mm | - |
Length | 6.15 mm | 6.15 mm | - |
Series | SI7 | SI7 | SI7 |
Width | 5.15 mm | 5.15 mm | - |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Part # Aliases | SI7464DP-GE3 | SI7465DP-GE3 | SI7465DP-E3 |
Unit Weight | 0.017870 oz | 0.017870 oz | 0.017870 oz |
Number of Channels | - | 1 Channel | 1 Channel |
Transistor Polarity | - | P-Channel | P-Channel |
Vds Drain Source Breakdown Voltage | - | 60 V | 60 V |
Id Continuous Drain Current | - | 3.2 A | 5 A |
Rds On Drain Source Resistance | - | 64 mOhms | 64 mOhms |
Vgs th Gate Source Threshold Voltage | - | 1 V | 1 V |
Vgs Gate Source Voltage | - | 10 V | 10 V |
Qg Gate Charge | - | 26 nC | 26 nC |
Minimum Operating Temperature | - | - 55 C | - 55 C |
Maximum Operating Temperature | - | + 150 C | + 150 C |
Pd Power Dissipation | - | 1.5 W | 3.5 W |
Configuration | - | Single | Single |
Channel Mode | - | Enhancement | Enhancement |
Transistor Type | - | 1 P-Channel | 1 P-Channel |
Forward Transconductance Min | - | 16 S | 16 S |
Fall Time | - | 30 ns | 30 ns |
Rise Time | - | 9 ns | 9 ns |
Typical Turn Off Delay Time | - | 65 ns | 65 ns |
Typical Turn On Delay Time | - | 8 ns | 8 ns |