SI7489

SI7489DP-T1-GE3 vs SI7489DP-T1-E3 vs SI7489DP-T1-GE3.

 
PartNumberSI7489DP-T1-GE3SI7489DP-T1-E3SI7489DP-T1-GE3.
DescriptionMOSFET -100V Vds 20V Vgs PowerPAK SO-8MOSFET -100V Vds 20V Vgs PowerPAK SO-8MOSFET P-CHANNEL 100-V (D-S) MOSFET
ManufacturerVishayVishayVishay
Product CategoryMOSFETMOSFETMOSFET
RoHSYE-
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSO-8SO-8-
Number of Channels1 Channel1 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage100 V100 V-
Id Continuous Drain Current28 A28 A-
Rds On Drain Source Resistance41 mOhms41 mOhms-
Vgs th Gate Source Threshold Voltage1 V1 V-
Vgs Gate Source Voltage20 V10 V-
Qg Gate Charge106 nC106 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation83 W83 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameTrenchFETTrenchFET-
PackagingReelReelCut Tape
SeriesSI7SI7SI74xxDx
Transistor Type1 P-Channel1 P-Channel-
BrandVishay / SiliconixVishay / SiliconixVishay / Siliconix
Forward Transconductance Min38 S38 S-
Fall Time100 ns100 ns-
Product TypeMOSFETMOSFETMOSFET
Rise Time20 ns, 160 ns20 ns, 160 ns-
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time100 ns, 110 ns100 ns, 110 ns-
Typical Turn On Delay Time15 ns, 42 ns15 ns, 42 ns-
Part # AliasesSI7489DP-GE3SI7489DP-E3-
Unit Weight0.017870 oz0.017870 oz0.017870 oz
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SI7489DP-T1-GE3 MOSFET -100V Vds 20V Vgs PowerPAK SO-8
SI7489DP-T1-E3 MOSFET -100V Vds 20V Vgs PowerPAK SO-8
SI7489DP-T1-GE3. MOSFET P-CHANNEL 100-V (D-S) MOSFET
Vishay
Vishay
SI7489DP-T1-E3 MOSFET P-CH 100V 28A PPAK SO-8
SI7489DP-T1-GE3 MOSFET P-CH 100V 28A PPAK SO-8
Top