PartNumber | SI7629DN-T1-GE3 | SI7629DN-T1-GE3-CUT TAPE | SI7629DN-T1 |
Description | MOSFET 20V 35A 52W | ||
Manufacturer | Vishay | - | Vishay Siliconix |
Product Category | MOSFET | - | FETs - Single |
RoHS | Y | - | - |
Technology | Si | - | Si |
Mounting Style | SMD/SMT | - | SMD/SMT |
Package / Case | PowerPAK-1212-8 | - | - |
Number of Channels | 1 Channel | - | 1 Channel |
Transistor Polarity | P-Channel | - | P-Channel |
Vds Drain Source Breakdown Voltage | 20 V | - | - |
Id Continuous Drain Current | 35 A | - | - |
Rds On Drain Source Resistance | 3.8 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 1.5 V | - | - |
Vgs Gate Source Voltage | 12 V | - | - |
Qg Gate Charge | 177 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - 55 C |
Maximum Operating Temperature | + 150 C | - | + 150 C |
Pd Power Dissipation | 52 W | - | - |
Configuration | Single | - | Single |
Channel Mode | Enhancement | - | - |
Tradename | TrenchFET | - | - |
Packaging | Reel | - | Digi-ReelR Alternate Packaging |
Height | 1.04 mm | - | - |
Length | 3.3 mm | - | - |
Series | SI7 | - | TrenchFETR |
Transistor Type | 1 P-Channel | - | 1 P-Channel |
Width | 3.3 mm | - | - |
Brand | Vishay / Siliconix | - | - |
Forward Transconductance Min | 64 S | - | - |
Fall Time | 28 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 38 ns | - | - |
Factory Pack Quantity | 3000 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 75 ns | - | - |
Typical Turn On Delay Time | 35 ns | - | - |
Part # Aliases | SI7629DN-GE3 | - | - |
Part Aliases | - | - | SI7629DN-GE3 |
Package Case | - | - | PowerPAKR 1212-8 |
Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
Mounting Type | - | - | Surface Mount |
Supplier Device Package | - | - | PowerPAKR 1212-8 |
FET Type | - | - | MOSFET P-Channel, Metal Oxide |
Power Max | - | - | 52W |
Drain to Source Voltage Vdss | - | - | 20V |
Input Capacitance Ciss Vds | - | - | 5790pF @ 10V |
FET Feature | - | - | Standard |
Current Continuous Drain Id 25°C | - | - | 35A (Tc) |
Rds On Max Id Vgs | - | - | 4.6 mOhm @ 20A, 10V |
Vgs th Max Id | - | - | 1.5V @ 250μA |
Gate Charge Qg Vgs | - | - | 177nC @ 10V |
Pd Power Dissipation | - | - | 52 W |
Vgs Gate Source Voltage | - | - | 12 V |
Id Continuous Drain Current | - | - | - 35 A |
Vds Drain Source Breakdown Voltage | - | - | - 20 V |
Vgs th Gate Source Threshold Voltage | - | - | - 1.5 V |
Rds On Drain Source Resistance | - | - | 3.8 mOhms |
Qg Gate Charge | - | - | 118 nC |
Forward Transconductance Min | - | - | 64 S |