PartNumber | SI8461DB-T2-E1. | SI8461DB | SI8461DB-T2-E1 |
Description | Transistor Polarity:P Channel, Continuous Drain Current Id:-3.7A, Drain Source Voltage Vds:-20V, On Resistance Rds(on):100mohm, Rds(on) Test Voltage Vgs:-4.5V, Threshold Voltage Vgs:-1V, Power D | MOSFET P-CH 20V MICROFOOT | |
Manufacturer | - | Vishay Siliconix | Vishay Siliconix |
Product Category | - | FETs - Single | FETs - Single |
Series | - | TrenchFETR | TrenchFETR |
Packaging | - | Digi-ReelR Alternate Packaging | Digi-ReelR Alternate Packaging |
Mounting Style | - | SMD/SMT | SMD/SMT |
Package Case | - | 4-XFBGA, CSPBGA | 4-XFBGA, CSPBGA |
Technology | - | Si | Si |
Operating Temperature | - | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Mounting Type | - | Surface Mount | Surface Mount |
Number of Channels | - | 1 Channel | 1 Channel |
Supplier Device Package | - | 4-Microfoot | 4-Microfoot |
Configuration | - | Single | Single |
FET Type | - | MOSFET P-Channel, Metal Oxide | MOSFET P-Channel, Metal Oxide |
Power Max | - | 780mW | 780mW |
Transistor Type | - | 1 P-Channel | 1 P-Channel |
Drain to Source Voltage Vdss | - | 20V | 20V |
Input Capacitance Ciss Vds | - | 610pF @ 10V | 610pF @ 10V |
FET Feature | - | Standard | Standard |
Current Continuous Drain Id 25°C | - | - | - |
Rds On Max Id Vgs | - | 100 mOhm @ 1.5A, 4.5V | 100 mOhm @ 1.5A, 4.5V |
Vgs th Max Id | - | 1V @ 250μA | 1V @ 250μA |
Gate Charge Qg Vgs | - | 24nC @ 8V | 24nC @ 8V |
Pd Power Dissipation | - | 1.8 W | 1.8 W |
Maximum Operating Temperature | - | + 85 C | + 85 C |
Minimum Operating Temperature | - | - 40 C | - 40 C |
Fall Time | - | 10 ns | 10 ns |
Rise Time | - | 25 ns | 25 ns |
Vgs Gate Source Voltage | - | 8 V | 8 V |
Id Continuous Drain Current | - | - 3.7 A | - 3.7 A |
Vds Drain Source Breakdown Voltage | - | - 20 V | - 20 V |
Rds On Drain Source Resistance | - | 136 mOhms | 136 mOhms |
Transistor Polarity | - | P-Channel | P-Channel |
Typical Turn Off Delay Time | - | 35 ns | 35 ns |
Typical Turn On Delay Time | - | 15 ns | 15 ns |
Qg Gate Charge | - | 9.5 nC | 9.5 nC |
Forward Transconductance Min | - | 7 S | 7 S |