SI9433BDY-T1-E

SI9433BDY-T1-E3 vs SI9433BDY-T1-E3-CUT TAPE vs SI9433BDY-T1-E

 
PartNumberSI9433BDY-T1-E3SI9433BDY-T1-E3-CUT TAPESI9433BDY-T1-E
DescriptionMOSFET 20V 6.2A 0.04Ohm
ManufacturerVishay-Vishay Siliconix
Product CategoryMOSFET-FETs - Single
RoHSE--
TechnologySi-Si
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseSO-8--
TradenameTrenchFET-TrenchFET/PowerPAK
PackagingReel-Digi-ReelR Alternate Packaging
Height1.75 mm--
Length4.9 mm--
SeriesSI9--
Width3.9 mm--
BrandVishay / Siliconix--
Product TypeMOSFET--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Part # AliasesSI9433BDY-E3--
Unit Weight0.017870 oz-0.017870 oz
Part Aliases--SI9433BDY-E3
Package Case--8-SOIC (0.154", 3.90mm Width)
Operating Temperature---55°C ~ 150°C (TJ)
Mounting Type--Surface Mount
Number of Channels--1 Channel
Supplier Device Package--8-SO
Configuration--Single
FET Type--MOSFET P-Channel, Metal Oxide
Power Max--1.3W
Transistor Type--1 P-Channel
Drain to Source Voltage Vdss--20V
Input Capacitance Ciss Vds---
FET Feature--Standard
Current Continuous Drain Id 25°C--4.5A (Ta)
Rds On Max Id Vgs--40 mOhm @ 6.2A, 4.5V
Vgs th Max Id--1.5V @ 250μA
Gate Charge Qg Vgs--14nC @ 4.5V
Pd Power Dissipation--1.3 W
Maximum Operating Temperature--+ 150 C
Minimum Operating Temperature--- 55 C
Fall Time--55 ns
Rise Time--55 ns
Vgs Gate Source Voltage--12 V
Id Continuous Drain Current--4.5 A
Vds Drain Source Breakdown Voltage--- 20 V
Rds On Drain Source Resistance--40 mOhms
Transistor Polarity--P-Channel
Typical Turn Off Delay Time--65 ns
Typical Turn On Delay Time--40 ns
Forward Transconductance Min--15 S
Channel Mode--Enhancement
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SI9433BDY-T1-E3 MOSFET 20V 6.2A 0.04Ohm
SI9433BDY-T1-E3-CUT TAPE New and Original
SI9433BDY-T1-E New and Original
Vishay
Vishay
SI9433BDY-T1-E3 MOSFET P-CH 20V 4.5A 8-SOIC
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