SI9435BDY-T

SI9435BDY-T1-E3 vs SI9435BDY-T1 vs SI9435BDY-T1-E3 , IMP811

 
PartNumberSI9435BDY-T1-E3SI9435BDY-T1SI9435BDY-T1-E3 , IMP811
DescriptionMOSFET 30V 5.7A 0.042OhmMOSFET 30V 5.7A 2.5W
ManufacturerVishay--
Product CategoryMOSFET--
RoHSE--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSO-8--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current4.1 A--
Rds On Drain Source Resistance42 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge16 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.3 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameTrenchFET--
PackagingReel--
SeriesSI9--
Transistor Type1 P-Channel--
BrandVishay / Siliconix--
Forward Transconductance Min13 S--
Fall Time30 ns--
Product TypeMOSFET--
Rise Time42 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time30 ns--
Typical Turn On Delay Time14 ns--
Part # AliasesSI9435BDY-E3--
Unit Weight0.006596 oz--
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SI9435BDY-T1-E3 MOSFET 30V 5.7A 0.042Ohm
SI9435BDY-T1-GE3 MOSFET 30V 5.7A 2.5W 42mohm @ 10V
SI9435BDY-T1-E3-CUT TAPE New and Original
SI9435BDY-T1 MOSFET 30V 5.7A 2.5W
SI9435BDY-T1-E3 , IMP811 New and Original
SI9435BDY-T1-E3 GE3 New and Original
SI9435BDY-T1-E3(9435B) New and Original
SI9435BDY-T1-E3. MOSFET 30V 5.7A 0.042Ohm
SI9435BDY-TI-E3 New and Original
Vishay
Vishay
SI9435BDY-T1-E3 MOSFET P-CH 30V 4.1A 8-SOIC
SI9435BDY-T1-GE3 MOSFET P-CH 30V 4.1A 8-SOIC
Top